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Etching solution for photoelectrochemical etching of gallium nitride

A photoelectrochemical and gallium nitride technology, applied in chemical instruments and methods, circuits, electrical components, etc., can solve problems such as cost and energy loss, adverse environmental impact, and material damage, and achieve the elimination of lattice damage and environmental hazards. The effect of low equipment requirements and reduced etching effect

Active Publication Date: 2022-04-22
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the inherent defects of this type of etchant cannot be ignored, and it will cause irreversible adverse effects on the environment while bringing huge costs and energy losses, and the damage to materials is also relatively large.

Method used

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  • Etching solution for photoelectrochemical etching of gallium nitride
  • Etching solution for photoelectrochemical etching of gallium nitride
  • Etching solution for photoelectrochemical etching of gallium nitride

Examples

Experimental program
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Effect test

Embodiment 1

[0041] This embodiment provides an etching solution for photoelectrochemical etching of gallium nitride, wherein glycine is used as an etchant, deionized water is used as a solvent, and glycine is dissolved in deionized water to form an etching solution.

[0042] Specifically, in this embodiment, the weight percentage of glycine is 20%, the weight percentage of deionized water is 80%, and a saturated glycine aqueous solution is prepared as an etching solution. The etching solution of this embodiment does not add additives.

[0043] In this embodiment, the above-mentioned etching solution is used to perform photoelectrochemical etching on the gallium nitride epitaxial wafer, including the following steps:

[0044] (1) Soak a 1.1cm×0.3cm GaN epitaxial wafer in aqua regia and wash it for 5 minutes.

[0045] (2) Put the GaN epitaxial wafer obtained in step (1) into acetone, ethanol, and deionized water in sequence for ultrasonic cleaning for 15 minutes each.

[0046] (3) Using a...

Embodiment 2

[0055] This embodiment provides an etchant for photoelectrochemical etching of gallium nitride, wherein L-glutamic acid is used as an etchant, formic acid is used as a solvent, and L-glutamic acid is dissolved in formic acid to form an etching solution. liquid.

[0056] Specifically, in this embodiment, the weight percentage of L-glutamic acid is 20%, the weight percentage of formic acid is 80%, and a saturated L-glutamic acid formic acid solution is prepared as an etching solution. The etching solution of this embodiment does not add additives.

[0057] In this embodiment, referring to the etching process steps (1) to (6) in Embodiment 1, the GaN epitaxial wafer is photoelectrochemically etched using the etching solution as described above in this embodiment.

[0058] Figure 4 It is the SEM picture of the GaN epitaxial wafer after etching in this embodiment, as Figure 4 shown, with figure 2 Compared with this GaN epitaxial wafer, the hierarchical structure of the etche...

Embodiment 3

[0060] This embodiment provides an etching solution for photoelectrochemical etching of gallium nitride, wherein methyl aspartame is used as an etchant and citric acid is used as a solvent to dissolve methyl aspartame Form etchant in citric acid. The etching solution of this embodiment also added 1-ethyl-3-methylimidazolium trifluoromethanesulfonate as an auxiliary agent.

[0061] Specifically, the percentage by weight of aspartame in the present embodiment is 15%, the percentage by weight of formic acid is 80%, and the percentage by weight of 1-ethyl-3-methylimidazole trifluoromethanesulfonate is 5%. %, prepared as saturated aspartame citric acid solution as etching solution.

[0062] In this embodiment, referring to the etching process steps (1) to (6) in Embodiment 1, the GaN epitaxial wafer is photoelectrochemically etched using the etching solution as described above in this embodiment.

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Abstract

The invention discloses an etchant for photoelectrochemically etching gallium nitride. The etchant is composed of amino acid or its derivatives dissolved in a solvent. The invention uses amino acid or its derivatives as an etchant to photoelectrochemically etch gallium nitride, which can effectively etch gallium nitride, and the etching process has low equipment requirements, convenient operation, simple process and environmental protection, which is beneficial to The damage to the surface of the material is small.

Description

technical field [0001] The invention belongs to the technical field of semiconductor etching, and in particular relates to an etching solution for photoelectrochemical etching of gallium nitride. Background technique [0002] Gallium Nitride (GaN), as a typical representative of the third-generation semiconductor materials, has excellent physical and chemical properties such as large band gap, high electron saturation shift velocity, good thermal conductivity, high hardness, and good thermal stability. It is one of the most concerned wide-bandgap and direct-bandgap semiconductor materials for making blue-green light and ultraviolet light optoelectronic devices. [0003] Current GaN etching methods are divided into dry etching and wet etching. Due to the high thermal and chemical stability of GaN materials, dry etching was mainly used in the early days. Dry etching uses expensive, bulky equipment, complicated operations, and most methods use toxic and harmful gases. In ord...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K13/00H01L21/306H01L31/18
CPCC09K13/00H01L21/30612H01L31/1856Y02P70/50
Inventor 潘革波张子昂张少辉
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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