Spin-orbit moment magnetic random access memory unit, array and Hamming distance calculation method

Abstract

The invention provides a spin-orbit moment magnetic random access memory unit, an array and a Hamming distance calculation method, the spin-orbit moment magnetic random access memory unit comprises a magnetic tunnel junction, a first transistor and a second transistor, the drain end of the first transistor is connected with the bottom of the magnetic tunnel junction, and the drain end of the second transistor is connected with the top of the magnetic tunnel junction. Deterministic spin magnetization overturning without an external magnetic field is achieved under the condition of a full electric field, meanwhile, the characteristic that resistance state change is controlled through non-polar current is achieved, the array formed by the spin-orbit moment magnetic random access memory units can achieve storage and calculation integrated exclusive OR logic under control of a peripheral circuit, and therefore, the method can be used in hardware implementation of reconfigurable high parallel computation, such as Hamming weight and Hamming distance computation in a memory.

Description

technical field [0001] The present disclosure relates to the field of integrated circuits, in particular to a spin-orbit moment magnetic random storage unit, an array, and a method for calculating Hamming distance. Background technique [0002] The Hamming weight is defined as the number of non-zero characters in a binary string, and the Hamming distance is defined as the number of different characters in corresponding positions between two equal-length binary strings. It is used in the fields of image recognition, information coding, and information security. Has a wide range of applications. [0003] In the information age where the demand for data processing is increasing and the processing speed is increasing, the development of computing systems based on the "von Neumann" architecture is increasingly affected by the "memory wall" problem caused by the gap between the speed of the memory and the processor. , to limit the further improvement of data processing speed and ...

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Problems solved by technology

[0003] In the information age where the demand for data processing is increasing and the processing speed is increasing, the development of computing systems based on the "von Neumann" architecture is increasingly affected by the "memory wall" problem caused by the gap between the speed of the memory and the processor. , to limit the further improvement of data processing speed and bandwidth

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