Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for improving bevel etching yield

A yield and slope technology, applied in the manufacturing of electrical components, circuits, semiconductor/solid-state devices, etc., can solve the problems of wafer yield reduction, backsplash, damage to the film layer, etc., and achieve wafer yield improvement and injection position. The effect of precision and improved wafer yield

Pending Publication Date: 2021-04-13
UNITED MICROELECTRONICS CENT CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the chemical solution touches the film layer at the edge of the wafer, it will splash back, which will damage the film layer 3mm inward from the edge of the wafer, resulting in a decrease in the yield of the wafer after bevel etching

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for improving bevel etching yield
  • Method for improving bevel etching yield

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] The following will clearly and completely describe the technical solutions in specific embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0025] Embodiment 1 of the present invention provides a method for improving the yield rate of bevel etching. For the structure adopted, please refer to figure 1 , provide a wafer 1 with a film layer 2, the film layer 2 covers the upper surface of the entire wafer 1 in this embodiment, because the quality of some film layers in the edge region 202 of the wafer 1 is not good, it needs to be Etching is performed. The etching device in this embodiment is, for example, the first nozzle 3, the first nozzle 3 is located above the ed...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for improving bevel etching yield, which belongs to the technical field of semiconductor manufacturing, and comprises the following steps of 1, providing a wafer with a film layer, 2, rotating the wafer, and spraying deionized water to a film layer which takes the center of the wafer as a circle center and is not greater than 80% of the radius of the wafer to form a water-based protective film, and 3, spraying a chemical solution to the film layer in the edge area of the wafer for etching until the film layer in the edge area of the wafer is etched cleanly. According to the method for improving the bevel etching yield provided by the invention, the damage of chemical solution back-splashing to the film layer in the central area of the wafer when bevel etching is carried out on the film layer in the edge area of the wafer can be reduced, so that the yield of the wafer after bevel etching is improved.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and in particular relates to a method for improving the yield rate of bevel etching. Background technique [0002] In the complementary metal oxide film semiconductor (CMOS) process flow, the deposition of part of the film layer is completed by chemical vapor deposition (CVD). The film layer deposited by CVD can be deposited on one side, and the film is deposited on the surface of the wafer to be deposited. layer, no film layer will be deposited on the surface of the wafer that does not need to be deposited. However, the CVD deposited film also has disadvantages. The film deposited on the edge of the wafer is relatively poor in quality and slightly warped, and peeling defects are prone to occur in subsequent processes. In order to prevent the occurrence of lift-off defects, the film layer in the edge area of ​​the wafer is usually bevel etched after the film layer is deposited by CVD. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/311H01L21/3213H01L21/67
CPCH01L21/31144H01L21/32139H01L21/6708
Inventor 吕相林
Owner UNITED MICROELECTRONICS CENT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com