Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Manufacturing method of TC-SAW filter

A TC-SAW and manufacturing method technology, applied in the direction of electrical components, impedance networks, etc., can solve the problems that the exposure and stripping process cannot be completed, the shape of the IDT electrode is not good enough, and the application of SAW products is limited, so as to improve the focus of lithography exposure , high yield, uniform width effect

Pending Publication Date: 2021-03-05
GUANGDONG CANCHIP TECH CO LTD
View PDF2 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0017] However, due to the limitations of the lift-off process in the prior art, when the line width of the IDT electrode is less than 0.5 μm, the exposure and lift-off process is basically impossible to complete, and the shape of the electrode is difficult to control, which limits the application of SAW products in the high-frequency field. application
[0018] Therefore, in view of the low yield rate of the TC-SAW manufacturing process in the prior art and the poor morphology of the IDT electrode, there is an urgent need for a manufacturing method that reduces the process flow, improves the yield rate, and can make the IDT electrode morphology better. method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of TC-SAW filter
  • Manufacturing method of TC-SAW filter
  • Manufacturing method of TC-SAW filter

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0053]Hereinafter, the present invention will be described more specifically by referring to specific embodiments shown in the accompanying drawings. Various advantages and benefits of the present invention will become apparent to those of ordinary skill in the art upon reading the following detailed description of the specific embodiments. It should be understood, however, that the present invention may be embodied in various forms and should not be limited by the embodiments set forth herein. The following embodiments are provided for a more thorough understanding of the present invention. Unless otherwise specified, the technical terms or scientific terms used in the application shall have the ordinary meanings understood by those skilled in the art to which the application belongs.

[0054] In the following descriptions, terms such as "front, back, upper, lower" are only used to express relative positions without other limiting meanings.

[0055] like figure 1 As shown...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Widthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a TC-SAW manufacturing method. The method comprises the steps of substrate pretreatment, front metal film plating, back metal film plating, photoresist coating, exposure, development, IDT deposition, photoresist stripping, first dielectric layer deposition, first dielectric layer thinning, second dielectric layer deposition, second dielectric layer thinning, probe measurement, back metal film etching and the like. According to the method provided by the invention, the technological process can be reduced, the yield is improved, the IDT electrode is uniform in width andbetter in morphology, and the device can be better protected.

Description

technical field [0001] The invention relates to the technical field of surface acoustic wave (SAW) filter manufacturing, in particular to a method for manufacturing a temperature-compensated surface acoustic wave (TC-SAW) filter. Background technique [0002] SAW filters are widely used in signal receiver front-ends as well as duplexers and receive filters. SAW filters combine low insertion loss and good rejection performance to achieve wide bandwidth and small size. [0003] In prior art SAW filters, an electrical input signal is converted into an acoustic wave by interleaved metallic interdigital transducers (IDTs), which are formed on a piezoelectric substrate. When the interdigital transducer structure of the existing SAW filter is made, the lift-off process (LIFT-OFF) is generally used, that is, a negative photoresist is used on the substrate to form a pattern through exposure and development, and then deposited on it. Deposit the metal film, and then remove the photo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H03H3/10H03H9/02
CPCH03H3/10H03H9/02622H03H9/02834
Inventor 桂华青张江浩
Owner GUANGDONG CANCHIP TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com