Plasma immersion ion implantation device

Abstract

The embodiment of the invention provides a plasma immersion ion implantation device. The plasma immersion ion implantation device comprises a process cavity, a medium cylinder, a gas uniformizing component, a coupling coil and a conductive component, wherein a base is arranged in the process cavity, the process cavity is grounded, and the base is electrically connected with a bias power supply; the medium cylinder is arranged at the top of the process cavity and communicates with the interior of the process cavity, and the inner diameter of the medium cylinder is gradually increased from top to bottom; the gas uniformizing component is made of a first conductive material and is arranged at the top of the medium cylinder, the lower surface of the gas uniformizing component is provided witha gas uniformizing area exposed in the medium cylinder, and a plurality of gas outlets are distributed in the gas uniformizing area and are used for conveying process gas into the medium cylinder; thecoupling coil is arranged on the periphery of the medium cylinder in a surrounding mode and is electrically connected with an excitation power supply; and the conductive component is electrically connected with the gas uniformizing component and the cavity wall of the process cavity. According to the plasma immersion ion implantation device provided by the embodiment of the invention, the wafer doping uniformity can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to a plasma immersion ion implantation device. Background technique [0002] In recent years, integrated circuits are rapidly developing toward high integration, and the application of plasma-related technologies has played a vital role in it. Plasma-related processes mainly include cleaning, etching, grinding, deposition, and doping, among which plasma doping is called plasma immersion ion implantation (PIII for short). Plasma immersion ion implantation equipment has been widely used in the doping process of modern electronic and optical devices. [0003] The plasma immersion ion implantation system is to immerse the target to be doped directly in the plasma containing the dopant, and by applying a specific negative voltage to the target, the dopant ions in the plasma enter the target surface. [0004] For the existing plasma immersion ion implantation system, t...

AI Technical Summary

Problems solved by technology

However, since the distances between the positions of the wafers on the susceptor at different radii and the nearest chamber wall are different, the plasma distributed in the process chamber corresponds to the position of the wafer at different radii. The equivalent current is different (that is, the equivalent current of the plasma is different at different positions in the radial direction of the process chamber), thereby reducing the doping uniformity

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