Six-layer wiring LCP packaging substrate, manufacturing method and multi-chip system-in-package structure
A technology for packaging substrates and substrates, which is used in the manufacture of semiconductor/solid-state devices, electrical components, and electrical solid-state devices to achieve the effects of good compatibility, high electromagnetic shielding, low moisture absorption, water permeability and oxygen permeability
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Embodiment 1
[0079] Such as figure 1 As shown, a six-layer wiring LCP packaging substrate of this embodiment includes:
[0080] 6 layers of patterned metal circuit layers distributed from the surface to the bottom surface, followed by the first layer of patterned metal circuit layer, the second layer of patterned metal circuit layer, the third layer of patterned metal circuit layer, and the fourth layer of patterned metal circuit layer layer, the fifth layer of patterned metal circuit layer and the sixth layer of patterned metal circuit layer; the sixth layer of patterned metal circuit layer is provided with a structure for welding BGA solder balls;
[0081] 5 layers of insulating dielectric layers between adjacent patterned metal circuit layers;
[0082] Located in the insulating dielectric layer between the first patterned metal wiring layer and the second patterned metal wiring layer, with openings facing the multiple blind slots of the first patterned metal wiring layer;
[0083] A p...
Embodiment 2
[0101] Such as Figure 4 As shown, this embodiment provides a method for manufacturing the six-layer wiring LCP packaging substrate 1 as described in Embodiment 1, including the following steps:
[0102] S1, such as Figure 5a As shown, blind holes are laser drilled on the double-sided copper-clad LCP substrate 155 to form third-type blind holes 143 that penetrate and connect the third patterned metal circuit layer 113 and the fourth layer patterned metal circuit layer 114. The blind holes Depth-to-diameter ratio≤1;
[0103] S2, such as Figure 5b As shown, the metallization of blind holes forms the third type of blind holes 143 filled with solid electroplated copper; The electroplating copper process is realized. After hole filling electroplating, the copper plating layer on the surface is thinned to form a third type of blind hole 143 filled with solid electroplated copper;
[0104] S3, such as Figure 5c As shown, the third layer of patterned metal circuit layer 113 an...
Embodiment 3
[0115] Such as Image 6 As shown, based on the LCP packaging substrate described in Embodiment 1-2, this embodiment provides a multi-chip system-in-package structure 61, including: the LCP packaging substrate 1 described in Embodiment 1-2, and BGA solder balls 2. Chip 3, metal frame 5 and metal cover 6;
[0116] The BGA solder balls 2 are soldered to the bottom surface of the LCP packaging substrate 1, and serve as the external secondary cascade I / O interface of the multi-chip system-in-package structure 61;
[0117] Metal partitions 51 are distributed in the metal enclosure 5; the metal enclosure 5 and the metal partitions 51 are welded to the upper surface of the LCP packaging substrate 1, and the metal cover 6 is welded to the metal enclosure 5 and the metal partitions 51, between the LCP packaging substrate 1 and the metal cover plate 6, a plurality of cavity structures 7 with airtight sealing performance and electromagnetic shielding performance are formed through the me...
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