Near-infrared broadband emission luminescent material, preparation method thereof and luminescent device containing near-infrared broadband emission luminescent material

A technology of luminescent materials and light-emitting devices, which is applied in the direction of luminescent materials, chemical instruments and methods, electrical components, etc., and can solve the problems of further improvement of luminous efficiency and high production costs

Pending Publication Date: 2021-02-09
XIAMEN INST OF RARE EARTH MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This kind of material uses raw materials containing gallium or germanium, the production cost is high, and the luminous efficiency needs to be further improved

Method used

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  • Near-infrared broadband emission luminescent material, preparation method thereof and luminescent device containing near-infrared broadband emission luminescent material
  • Near-infrared broadband emission luminescent material, preparation method thereof and luminescent device containing near-infrared broadband emission luminescent material
  • Near-infrared broadband emission luminescent material, preparation method thereof and luminescent device containing near-infrared broadband emission luminescent material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-10

[0052] Examples 1-10: RX 3-x (BO 3 ) 4 :xCr 3+ Preparation of Luminescent Materials

[0053] Examples 1-10 were synthesized by a solid-state reaction method, and the difference lies in the type, amount and synthesis temperature of raw materials. Table 1 lists the types and amounts of raw materials used.

[0054] The concrete steps of synthesis are:

[0055] 1. According to the chemical formula RX 3-x (BO 3 ) 4 :xCr 3+ The stoichiometric ratio of each element in the formula, the oxygen-containing compound of the R element, the oxygen-containing compound of the X element, and the Cr 2 o 3 and H 3 BO 3 , H 3 BO 3 An excess of 5wt% is used as a flux.

[0056] 2. After adding alcohol to mix the raw materials evenly, put the mixture into a crucible and put it into a heating device for calcination. The calcination conditions are: the raw material is now calcined at 500°C for 4 hours, take out the raw material, grind it again, and put it into a box furnace , carry out s...

Embodiment 10-19

[0061] Examples 10-19: RX 3-x (BO 3 ) 4 :xCr 3+ Preparation of Luminescent Materials

[0062] Examples 10-19 are synthesized by a solid-state reaction method, and their chemical formulas correspond to those of Examples 1-10, the difference is that the required raw materials are weighed according to the stoichiometric ratio, and the flux used is CaF 2 、BaF 2 , MgF 2 , AlF 2 、K 2 SO 4 、LiCO 3 etc., the synthesis temperature is 50° C. lower than that of Examples 1-10. Other processes are consistent with Example 1-10.

[0063] Table 2. Preparation parameters of Examples 10-19

[0064]

[0065] Spectral properties of the sample were measured with a FLS980 (Edinburgh Instruments) fluorescence spectrometer, and phase analysis of the sample was performed with an X-ray diffractometer (DMAX2500PC, Rigaku, Japan).

[0066] The samples synthesized by the solid phase reaction method, XRD analysis shows that they are all pure phases, such as figure 1 The XRD pattern of the s...

Embodiment 20

[0071] This embodiment provides an LED light-emitting device containing near-infrared light-emitting materials, the structure of which is as follows image 3 As shown, the light emitting device includes an LED chip 1 , a heat sink 2 , a base 3 , a light conversion part B 4 , a light conversion part A 5 and a lens 6 . The LED chip 1 is used as a light source, the heat sink 2 is arranged under the LED chip 1, the LED chip 1, the light conversion part A5 and the light conversion part B4 are arranged in order from bottom to top, and the lens 6 is located above the light conversion part 4.

[0072] The light conversion part A5 absorbs the primary light emitted by the LED chip 1 and converts it into secondary light of a higher wavelength, and the light conversion part B4 absorbs the primary light emitted by the LED chip 1 and the secondary light emitted by the light conversion part A5, and converts them to Converted to higher wavelength tertiary light.

[0073] The light-emitting d...

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Abstract

The invention discloses a near-infrared broadband emission luminescent material, a preparation method thereof and a luminescent device containing the material. The chemical composition of the luminescent material is represented by a chemical formula RX<3-x> (BO<3>)<4>: xCr < 3 + >, R is one, two or more of Y and La series rare earth elements, X is one, two or more of Al, Sc, Ga and Fe, Cr < 3 + >is a luminescent center ion, and x is greater than or equal to 0.01 mol% and less than or equal to 100 mol%. The luminescent material is synthesized by a solid phase method, and the preparation process is simple, environment-friendly and low in cost. The luminescent material provided by the invention is excited by a purple light, blue light or red light LED chip to emit 650-1300nm broadband near-infrared light.

Description

technical field [0001] The invention belongs to the field of luminescent materials, and in particular relates to a near-infrared luminescent material, a preparation method thereof, and a luminescent device containing the luminescent material. Background technique [0002] In recent years, with the deepening of research in the near-infrared field (700-2500nm) and the expansion of its application range, especially with the development of optical fiber communication, plant lighting, facial recognition, iris recognition, security monitoring, 3D sensing, spectral test light source, The development of biomedicine, food testing, anti-counterfeiting and other fields urgently requires the development of efficient and stable near-infrared luminescence technology, and near-infrared light source is an important auxiliary light source for this technology. [0003] The current near-infrared light sources mainly include tungsten lamps, infrared LED chips and infrared lasers. Tungsten lamp...

Claims

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Application Information

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IPC IPC(8): C09K11/78H01L33/50
CPCC09K11/778C09K11/7712H01L33/502
Inventor 朱浩淼黄得财
Owner XIAMEN INST OF RARE EARTH MATERIALS
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