Waveguide type germanium photoelectric detector based on photonic crystals and preparation method

A photodetector and photonic crystal technology, which is applied to optical waveguides, light guides, semiconductor devices, etc., can solve the problems of high-speed characteristics of detectors, difficulty in further optimization of dark current, low absorption coefficient, etc., to achieve low dark current, improve Effect of absorption efficiency, high light absorption efficiency

Pending Publication Date: 2021-02-05
SHANGHAI IND U TECH RES INST
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Problems solved by technology

Limited by the relatively low absorption coefficient of germanium (Ge) materials in the C and L communication bands, in order to achieve high responsivity, the detector must be long enough, which makes it difficult to further optimize the high-speed characteristics and dark current of the detector

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  • Waveguide type germanium photoelectric detector based on photonic crystals and preparation method
  • Waveguide type germanium photoelectric detector based on photonic crystals and preparation method
  • Waveguide type germanium photoelectric detector based on photonic crystals and preparation method

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Embodiment Construction

[0035] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0036] For example, when describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the general scale, and the schematic diagram is only an example, which should not limit the protection scope of the present invention. In addition, the three-dimensional space dimensions of length, width and depth sho...

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Abstract

The invention provides a waveguide type germanium photoelectric detector based on photonic crystals and a preparation method. The germanium photoelectric detector comprises a silicon waveguide structure; and a germanium photoelectric detector which is connected to the silicon waveguide structure, wherein periodically arranged dielectric materials are arranged in a germanium absorption region of the germanium photoelectric detector and a peripheral silicon material region at the periphery of the germanium absorption region so as to form a photonic crystal structure with a slow light effect. Compared with a conventional waveguide type germanium photoelectric detector, the photoelectric detector can achieve higher light absorption efficiency, and achieves the preparation of a low-dark-current, low-capacitance and high-responsivity photoelectric detector through reducing the size of a device.

Description

technical field [0001] The invention belongs to the fields of semiconductor manufacturing and optical communication, and in particular relates to a photonic crystal-based waveguide germanium photodetector and a preparation method. Background technique [0002] Photodetectors are widely used in various fields of military and national economy. In the visible or near-infrared band, it is mainly used for optical communication, ray measurement and detection, industrial automatic control, photometry, etc.; in the infrared band, it is mainly used for missile guidance, infrared thermal imaging, infrared remote sensing, etc. [0003] Germanium (Ge) photodetectors are widely used in the fields of optical communication, optical interconnection and optical sensing because of their easy integration with silicon (Si). However, there is a large lattice mismatch between germanium (Ge) material and silicon (Si) material, and it is extremely challenging to epitaxially grow high-quality germa...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0232H01L31/09H01L31/18G02B6/122G02B6/13
CPCG02B6/1225G02B6/13H01L31/02327H01L31/09H01L31/1812Y02P70/50
Inventor 汪巍方青涂芝娟曾友宏蔡艳余明斌
Owner SHANGHAI IND U TECH RES INST
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