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Micro LED wafer structure and production method thereof

A LED structure and wafer technology, applied in electrical components, electrical solid devices, circuits, etc., can solve the problem of large dislocations in the epitaxial layer of LED chips, improve luminous efficiency and parameter consistency, reduce dislocation density, The effect of a simple driving circuit

Active Publication Date: 2021-01-29
HCP TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a Micro LED wafer structure and its preparation method, which is used to solve the problem of large dislocations in the epitaxial layer of the LED chip in the prior art.

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  • Micro LED wafer structure and production method thereof
  • Micro LED wafer structure and production method thereof
  • Micro LED wafer structure and production method thereof

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Embodiment 1

[0051] Such as Figure 1 to Figure 6 As shown, this embodiment provides a method for preparing a Micro LED wafer structure, and the preparation method includes steps:

[0052] Such as figure 1 As shown, step 1) and step 2) are first performed to provide a single crystal substrate 101, 201, the single crystal substrate 101, 201 includes opposite first and second surfaces, on the single crystal substrate An LED structure layer is formed on the first surface of 101, 201, and a plurality of Micro LED arrays are prepared on the single crystal substrate 101, 201 based on the LED structure layer.

[0053] The single crystal substrates 101, 201 may be compound single crystal substrates of Group III and Group V. In this embodiment, the single crystal substrates 101, 201 are selected as GaN single crystal substrates. The present invention uses single crystal substrates 101, 201 (such as single crystal GaN substrates) to grow each layer of the chip, which greatly reduces the dislocatio...

Embodiment 2

[0076] Such as Figure 7 ~ Figure 9 As shown, this embodiment also provides a Micro LED wafer structure and its preparation method, the basic steps and basic structure of which are similar to those of Embodiment 1, wherein the difference from Embodiment 1 is that the Micro LED array does not The second conductive layer 109 needs to be prepared in the Micro LED chip. The N electrode 116 (common cathode electrode) of the Micro LED array is formed at the common cathode path and between the Micro LED chips. On the one hand, the common cathode electrode is connected with the driver The circuit connection, on the other hand, reduces the voltage drop generated by the common cathode path, so that the voltage of each Micro LED chip is consistent when it is working. Based on this, the area of ​​the Micro LED chip can be greatly saved, thereby greatly improving the luminescence per unit area of ​​the Micro LED chip. strength.

[0077] As an example, the common cathode electrode may be i...

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Abstract

The invention provides a Micro LED wafer structure and a production method thereof. The production method comprises the steps: 1), providing a single-crystal substrate which includes a first surface and a second surface opposite to each other, and forming an LED structure layer on the first surface of the single-crystal substrate; 2) preparing a plurality of Micro LED arrays on the single-crystalsubstrate based on the LED structure layer; 3) thinning the single-crystal substrate from the second surface, and then forming a lens array on the second surface through a wet etching process; and 4)forming a black matrix on the second surface of the single-crystal substrate, forming a quantum dot array in the black matrix, and correspondingly arranging the quantum dot array, the lens array and the Micro LED arrays. According to the invention, the single-crystal substrate is adopted to grow each layer of the chip so that the dislocation density is greatly reduced. According to the invention,the lens array is formed, the emergent light of each chip on a wafer is converged, optical crosstalk among the chips can be effectively reduced, and a contact effect of the emergent light and the quantum dots is better.

Description

technical field [0001] The invention belongs to the field of design and manufacture of semiconductor light emitters, in particular to a Micro LED wafer structure and a preparation method thereof. Background technique [0002] With the advancement of display technology, the market is concerned about the shortcomings of liquid crystal displays (LCD, Liquid Crystal Display), low contrast, low color gamut, and low response speed, as well as the burn-in and graininess of organic light-emitting displays (OLED, Organic Light Emitting Display). Dissatisfaction with shortcomings such as heavy weight, color cast, and poor light comfort. As a next-generation display technology, Micro LED display technology has the advantages of high contrast, high color gamut, high response speed, ultra-high resolution, and long life. It has both the advantages of LCD and OLED without its disadvantages. Micro LED also has the advantages of flexible display and low energy consumption, and is known as a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/38H01L33/58H01L27/15
CPCH01L33/0075H01L33/387H01L33/58H01L27/153H01L2933/0016H01L2933/0058
Inventor 庄文荣孙明卢敬权
Owner HCP TECH CO LTD
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