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Semiconductor chip cleaning agent, preparation method and application thereof

A semiconductor and cleaning agent technology, applied in semiconductor/solid-state device manufacturing, preparation of detergent mixture composition, detergent composition, etc., can solve the problems of environmental operators' health hazards, wafer cracks, unfriendly environment, etc. Achieve the effect of good industrialization potential, excellent cleaning performance and excellent cleaning effect

Active Publication Date: 2021-01-26
江苏奥首材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] CN109679790A discloses a solvent-based cleaning agent based on hydrocarbon solvents: it has good solubility to wax, but in the process of wax removal, it is necessary to use acetone to carry out follow-up cleaning of the residual cleaning agent; acetone has a low boiling point and is easy to clean. Volatile, high consumption, not only unfriendly to the environment during waste liquid treatment, but also cause certain hidden dangers to the environment of the workshop and the health of operators
[0018] As mentioned above, the chip cleaning solution in the prior art either contains substances that seriously pollute the environment or are harmful to the operator, or must be cleaned with the help of ultrasound during the cleaning process, which easily leads to tiny cracks on the chip and has a certain damage rate

Method used

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  • Semiconductor chip cleaning agent, preparation method and application thereof
  • Semiconductor chip cleaning agent, preparation method and application thereof
  • Semiconductor chip cleaning agent, preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] S1: Based on the total mass percentage of 100%, weigh the following components in mass percentage: 4% of the wet-strip agent of the above formula (I) (wherein x=6), 3% of the perfluorinated terminal Base polyoxyethylene ether (where m=4 and n=8), 0.1% penetrant sodium 1,4-di(2-ethylhexyl) succinate sulfonate, 12% solubilizer n-dodecane , 2% composite functional agent 9,10-dihydroxystearic acid methyl ester, 2% nitrogen-containing complexing agent o-phenanthroline, 0.5% organic auxiliary diethanolamine and the high-purity water of the remainder (that is, the mass percentage is 76.4%);

[0069] S2: Add all components except pure water into the container, and heat it to 40°C under stirring until all materials are completely dissolved, then add 1 / 2 amount of composite functional agent (that is, 1% by mass percentage) while keeping stirring. said composite functional agent) and all ultrapure water, then heated up to 68°C, then added the remaining 1 / 2 amount of composite fun...

Embodiment 2

[0071] S1: Based on the total mass percentage of 100%, weigh the following components in mass percentage: 8% of the wet-strip agent of the above formula (I) (wherein x=6), 2% of the perfluorinated terminal Base polyoxyethylene ether (where m=4 and n=8), 0.5% penetrant sodium 1,4-di(2-ethylhexyl) succinate sulfonate, 6% solubilizer n-octadecane , 5% composite functional agent 9,10-dihydroxystearic acid methyl ester, 1% nitrogen-containing complexing agent o-phenanthroline, 1.5% organic auxiliary agent diglycolamine and the high-purity water of the remainder (that is, quality percentage is 76%);

[0072]S2: Add all components except pure water into the container, and heat to 50°C under stirring until all the materials are completely dissolved, then add 1 / 2 amount of composite functional agent (that is, 2.5% by mass percentage) while keeping stirring The composite functional agent) and all the ultrapure water are then heated up to 60°C, and then the remaining 1 / 2 amount of the c...

Embodiment 3

[0074] S1: Based on the total mass percentage of 100%, weigh the following components in mass percentage: 6% of the wet-strip agent of the above formula (I) (wherein x=6), 2.5% of the perfluorinated terminal base polyoxyethylene ether (where m=4 and n=8), 0.3% penetrant sodium 1,4-bis(2-ethylhexyl)succinate sulfonate, 9% solubilizer n-pentadecane , 3.5% composite functional agent 9, 10-dihydroxystearic acid methyl ester, 1.5% nitrogen-containing complexing agent o-phenanthroline, 1% organic additive diethanolamine laurate and the high-purity water (that is, quality percentage of 76.2%);

[0075] S2: Put all the components except pure water into the container, and heat it to 45°C under stirring until all the materials are completely dissolved, then add 1 / 2 amount of composite functional agent (that is, 1.75% by mass percentage) while keeping stirring. The composite functional agent) and all the ultrapure water, then heated up to 64°C, then added the remaining 1 / 2 amount of com...

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Abstract

The invention relates to a semiconductor chip cleaning agent, which comprises a wetting stripping composition composed of a wetting stripping agent and perfluoro-terminated polyoxyethylene ether, andcan also comprise a penetrating agent, a solubilizer, a composite functional agent, a nitrogen-containing complexing agent, an organic auxiliary agent and ultrapure water. The invention also providesa preparation method and application of the semiconductor chip cleaning agent, and a semiconductor chip cleaning method. The cleaning agent achieves an excellent technical effect through a wetting stripping composition composed of specific components and optimal combination and synergy of a penetrating agent, a composite functional agent and a nitrogen-containing complexing agent, and has good industrial application prospect and popularization potential in the technical field of semiconductor chip cleaning.

Description

technical field [0001] The invention relates to a cleaning agent for precision electronic components, in particular to a cleaning agent for semiconductor chips and its preparation method and application, belonging to the technical field of semiconductor cleaning. Background technique [0002] In the field of semiconductor technology, for semiconductor chip products such as LED chips, power chips, radio frequency chips, and communication chips, etc., substrates such as sapphire, silicon carbide, gallium nitride, gallium arsenide, and germanium are generally used. After the grinding and polishing process in the back-end process, it is necessary to clean and remove the waxy layer, polishing powder residue, polishing liquid residue, and metal particles. [0003] The latter part of the semiconductor chip manufacturing process usually uses a cleaning agent to complete the cleaning process. After cleaning, the chip can enter the next process only after passing the test. Therefore,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C11D1/831C11D3/18C11D3/20C11D3/28C11D3/30C11D3/60H01L21/02H01L21/67
CPCC11D1/831C11D1/004C11D3/181C11D3/2093C11D3/28C11D3/30H01L21/02041H01L21/67057C11D1/72C11D1/721C11D1/28C11D1/66C11D2111/22
Inventor 吕晶侯军
Owner 江苏奥首材料科技有限公司
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