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Near-infrared absorbing composition, near-infrared absorbing film, and image sensor for solid-state imaging element

A near-infrared, absorptive technology, applied in optical components, instruments, chemical instruments and methods, etc., can solve the dispersion stability of copper complexes (insufficient moisture resistance, no mention of near-infrared absorbing compositions) Stability, the impact of the final quality of the near-infrared blocking filter, etc., to achieve the effect of excellent near-infrared light absorption, visible light transmittance, and improved dispersion stability

Active Publication Date: 2021-01-05
KONICA MINOLTA INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In each of the above-mentioned patent documents, in order to improve the quality, the use of a specific solvent as a dispersion medium, the addition of a solubilizing agent, etc., have achieved improvement in storage stability. object, addressing the stability of the copper phosphonate salt after adding a resin component as a binder, but did not mention the stability of the near-infrared-absorbing composition in a state without a binder component, the present inventors As a result of research, it was found that the dispersion stability of the near-infrared-absorbing composition in the stage before the addition of the binder resin has a large influence on the final quality of the near-infrared cut filter
[0005] In addition, there is a problem that aggregation occurs in a film containing a binder even if it is a dispersion liquid that does not contain a binder because moisture enters the copper complex.
In Patent Document 4, an optical filter is disclosed, which includes a near-infrared light absorbing layer containing a phosphate ester having an ethylene oxide structure, a phosphate ester compound having a propylene oxide structure, and copper. However, it has been found that even when such a copper complex is used, the dispersibility of the copper complex and the dispersion stability (moisture resistance) at the time of water mixing are insufficient.

Method used

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  • Near-infrared absorbing composition, near-infrared absorbing film, and image sensor for solid-state imaging element
  • Near-infrared absorbing composition, near-infrared absorbing film, and image sensor for solid-state imaging element
  • Near-infrared absorbing composition, near-infrared absorbing film, and image sensor for solid-state imaging element

Examples

Experimental program
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Effect test

Embodiment 1

[0402]"Preparation of Near Infrared Absorbent"

[0403](Preparation of Near Infrared Absorber 1)

[0404]The near-infrared absorber 1 was prepared according to the following method.

[0405]16.54 g of copper acetate and 661.46 g of tetrahydrofuran (abbreviation: THF) as a solvent were mixed, the copper acetate was dissolved using an ultrasonic irradiation machine, and the filtration operation was performed to remove the insoluble copper acetate to obtain 678 g of copper acetate solution.

[0406]Next, with respect to 678 g of the copper acetate solution, a solution prepared by dissolving 43.86 g of an exemplary compound (V-1) which is a compound represented by the general formula (V) in 80.0 g of THF was added while stirring for 30 minutes Next, after stirring at room temperature for 16 hours, 238.97g of toluene was added, and THF as a solvent was volatilized in an environment of 55-90°C for 3 hours to make the solid content 10% by mass, and 251.0g of near-infrared absorption was prepared.剂1.

[0...

Embodiment 2

[0518]"Production of Near Infrared Absorbing Film"

[0519]To each near-infrared absorbing composition prepared in Example 1, a polysiloxane silicone resin (KR-255, manufactured by Shin-Etsu Chemical Co., Ltd.) was added and stirred to prepare a coating liquid for forming a near-infrared absorbing film . The prepared coating liquid was applied on the substrate by spin coating to produce near-infrared absorbing films 1 to 39.

[0520]Next, predetermined heat treatment was performed on the near-infrared absorbing film to cure the coating film, and near-infrared blocking filters 1 to 39 which can be applied to an image sensor for a solid-state imaging element were produced.

[0521]For each near-infrared cut-off filter produced above, the visible light transmittance and near-infrared transmittance in the film state were evaluated in the same manner as in the method described in Example 1. As a result, it was confirmed that the near-infrared cut-off filter system The same effect is also obtained...

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Abstract

The present invention addresses the problem of providing: a near-infrared absorbing composition having low haze, excellent near-infrared absorptivity, improved dispersion stability (moisture resistance) of a metal complex when there is moisture, and improved thermostability of the metal complex; a near-infrared absorbing film formed using the same; and an image sensor for a solid-state imaging element, said image sensor being equipped with the near-infrared absorbing film. The near-infrared absorbing composition is characterized by containing at least a near-infrared absorbent, a metal compound, and a solvent, wherein the near-infrared absorbent contains metal ions, and the metal compound has a structure represented by general formula (1), general formula (2), or general formula (3). General formula (I): M(OR1)n; general formula (II): M<n+>(O=R2-O<->)n; and general formula (III): (OR3)n-mM<n+>(<->OCOR4)m.

Description

Technical field[0001]The present invention relates to a near-infrared absorbing composition, a near-infrared absorbing film using the same, and an image sensor for a solid-state imaging element. More specifically, it relates to excellent near-infrared absorbing ability and dispersion stability (moisture resistance) when water is mixed. The improved near-infrared absorbing composition, the near-infrared absorbing film using the same, and the image sensor for solid-state imaging devices provided with this near-infrared absorbing film.Background technique[0002]In recent years, CCD (Charge Coupled Device) and CMOS (Complementary Metal Oxide Semiconductor) image sensors are used as solid-state image sensors for color images in video cameras, digital cameras, and mobile phones with camera functions. In other words, since a silicon photodiode that is sensitive to light in the near-infrared wavelength region is used in its light-receiving section, it is necessary to correct the visual sensi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B5/22C09K3/00
CPCC09K3/00G02B5/208G02B5/223C09B67/0092C09B67/0033G02B1/04C09B57/10C09B67/0069
Inventor 林健司水谷洋介大福幸司板本夏实
Owner KONICA MINOLTA INC
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