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Gallium oxide junction barrier Schottky diode with field plate structure

A junction barrier Schottky and gallium oxide technology, which is applied in the field of gallium oxide junction barrier Schottky diodes, can solve the problems of uneven electric field of the device, increased leakage current, poor device reliability, etc., to improve the critical The breakdown field strength and breakdown voltage, the effect of alleviating the effect of electric field concentration, and reducing the reverse leakage current

Inactive Publication Date: 2021-01-05
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the introduction of the PN junction still cannot alleviate the electric field concentration effect, because the electric field concentration effect is at the edge and corner of the junction, which is easy to cause obvious inhomogeneity of the electric field of the device
When the junction barrier Schottky diode is reverse biased, the electric field distribution in the horizontal direction of the depletion region is uneven, especially in the edge and corner regions, where the electric field lines are densely distributed, so that the junction barrier Schottky diode will advance in the above regions. If it is broken down, the leakage current will also increase, resulting in poor reliability of the device
The electric field concentration effect severely restricts the reverse characteristics and withstand voltage capability of the junction barrier Schottky diode, making the BFOM of gallium oxide devices far lower than the ideal value, affecting its high-power output performance and limiting its application in the high-voltage field

Method used

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  • Gallium oxide junction barrier Schottky diode with field plate structure
  • Gallium oxide junction barrier Schottky diode with field plate structure
  • Gallium oxide junction barrier Schottky diode with field plate structure

Examples

Experimental program
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Effect test

Embodiment 1

[0037] In Example 1, a gallium oxide junction barrier Schottky diode with a P-type annular material region and a P-type gate-shaped material region of P-type NiO and an anode field plate length of 1 μm was fabricated.

[0038] Step 1, for a thickness of 300 μm and a doping concentration of 10 18 cm -3The surface of the gallium oxide substrate is pretreated.

[0039] 1.1) The gallium oxide substrate was immersed in acetone solution, absolute ethanol solution and deionized water for ultrasonic cleaning for 10min each, and the cleaned gallium oxide substrate was blown dry with nitrogen gas;

[0040] 1.2) Place the cleaned and dried gallium oxide substrate in H 2 Thermal treatment was performed at a temperature of 1000°C in an atmospheric reaction chamber to remove surface contaminants.

[0041] Step 2, deposit a gallium oxide epitaxial layer, such as figure 2 a.

[0042] The pretreated gallium oxide substrate was put into the hydride vapor phase epitaxy deposition system, a...

Embodiment 2

[0063] In Example 2, a gallium oxide junction barrier Schottky diode with a P-type annular material region and a P-type gate-shaped material region of P-type GaN and an anode field plate length of 5 μm was fabricated.

[0064] Step 1, the thickness is 650μm, the doping concentration is 10 19 cm -3 The surface of the gallium oxide substrate is cleaned and pretreated.

[0065] The specific implementation of this step is the same as that of step 1 in Embodiment 1.

[0066] The second step is to grow a gallium oxide epitaxial layer, such as figure 2 a.

[0067] The pretreated gallium oxide substrate was put into the hydride vapor phase epitaxy deposition system, and the N 2 For carrier gas, keep the temperature at 1200K, N 2 The flow rate is 20.3slm, the flow rate of GaCl is 60slm, the proportion of GaCl is 0.05, the deposition thickness is 8 μm, and the doping concentration is 10 17 cm -3 gallium oxide epitaxial layer.

[0068] Step 3, making a P-type annular material re...

Embodiment 3

[0088] In Example 3, a gallium oxide junction barrier Schottky diode with the P-type annular material region and the P-type gate-shaped material region being P-type diamond and the anode field plate length of 10 μm was fabricated.

[0089] Step A, with a thickness of 450 μm and a doping concentration of 10 20 cm -3 The surface of the gallium oxide substrate is cleaned and pretreated.

[0090] The specific implementation of this step is the same as that of step 1 in Embodiment 1.

[0091] Step B, growing a gallium oxide epitaxial layer, such as figure 2 a.

[0092] The pretreated gallium oxide substrate was put into the hydride vapor phase epitaxy deposition system, and the N 2 For carrier gas, keep the temperature at 2000K, N2 The flow rate is 48slm, the GaCl flow rate is 100slm, the GaCl ratio is 0.5, the deposition thickness is 10μm, and the doping concentration is 10 18 cm -3 Gallium oxide epitaxial layer.

[0093] Step C, making the P-type annular material area and...

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Abstract

The invention discloses a gallium oxide junction barrier Schottky diode with a field plate structure, and mainly solves the problems that an electric field concentration effect exists in an existing device and a P type is not easy to dope. The diode comprises a cathode metal layer (8), a substrate (7) and an epitaxial layer (6), the upper half part of the epitaxial layer is provided with a P-typeannular region (4) and a P-type gate region (5), the two P-type regions form a PN junction on the epitaxial layer, and the upper surface of the epitaxial layer is provided with an anode metal layer (3); the edge of the metal layer is arranged on the upper surface of the P-type annular region, the remaining upper surface of the P-type annular region is covered with a dielectric layer (2), the dielectric layer surrounds the edge of the anode metal layer and covers the edge of the upper surface of the anode metal layer, and anode field plates (1) are arranged on the upper surface of the anode metal layer and the upper surface of the dielectric layer to relieve the electric field concentration effect. According to the invention, the breakdown voltage is improved, the forward current of the device is increased, the reverse leakage current is reduced, and the device can be used for manufacturing high-power and high-frequency rectification, detection and frequency mixing circuits.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a gallium oxide junction barrier Schottky diode, which can be used in high-power, high-frequency rectification, wave detection and frequency mixing circuits. Background technique [0002] With the continuous development of power electronic devices, the research on power device structures and related semiconductor materials is also expanding to meet the ever-evolving social needs. Today, the society has great demand for wide-bandgap semiconductors, from the first-generation semiconductor materials Si, Ge, the second-generation semiconductor materials GaAs, InP, the third-generation semiconductor materials SiC, GaN, to today's new semiconductor materials Ga 2 O 3 , diamond, the forbidden band width is gradually increasing, and the reverse withstand voltage of the new material power semiconductor is also rising. [0003] As a widely used power device, Schottky diode ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/20H01L29/40H01L29/06H01L29/872
CPCH01L29/0611H01L29/2003H01L29/402H01L29/872
Inventor 周弘周昕雷维娜张进成郝跃
Owner XIDIAN UNIV
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