Preparation method of light modulation terahertz absorption device with all-carbon structure

A carbon structure, terahertz technology, applied in optical components, instruments, optics, etc., can solve the problems of difficult processing of single-layer graphene, inability to carry out optical signals, low terahertz reflection intensity, etc., to avoid low sublimation growth density, The effect of enhancing the terahertz signal and increasing the specific surface area

Active Publication Date: 2021-01-01
HANGZHOU GAOXI TECH CO LTD
View PDF2 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the field of terahertz molecular detection, conventionally used materials are metals and semimetals, which have two serious problems: first, they have poor molecular affinity, especially with molecules containing conjugated structures; second, they cannot carry out optical signals. Modulation, unable to respond to changes in the external optical environment
However, single-layer graphene is not easy to process and is easily damaged, resulting in a rapid decrease in conductivity and poor processing continuity. At the same time, the terahertz reflection intensity is too low, so it is not suitable for making terahertz absorbers.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of light modulation terahertz absorption device with all-carbon structure
  • Preparation method of light modulation terahertz absorption device with all-carbon structure
  • Preparation method of light modulation terahertz absorption device with all-carbon structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] (1) Assemble a graphene oxide solution (0.5ug / mL) on an anodized aluminum substrate by spin coating to form a graphene oxide film with a thickness of 40 atomic layers, and chemically reduce the graphene oxide film. The reduction condition is HI as the reducing agent, Treat at 60°C for 4h.

[0041] (2) FeCl 3 (100°C) is uniformly vapor-deposited on the surface of the reduced nano-film, cooled, solidified and shrunk to obtain an exfoliated graphene nano-film.

[0042] (3) With a heating rate of 10°C / min, the graphene oxide film was heated up to 1200°C by electric heating, and kept for 4h to obtain a graphene film layer with high defects and high terahertz transmission, with a defect content of 30%; the graphite oxide The temperature of the olefin film was raised to 2300 °C and kept for 2 h to reduce the defects of the graphene oxide film to 0.2%.

[0043] (4) The obtained high-defect graphene film and low-defect graphene film are attached to the front and back of the po...

Embodiment 2

[0045] (1) Assemble a graphene oxide solution (0.5ug / mL) on a glass fiber substrate to form a 60-atom-layer-thick graphene film by suction filtration, and then chemically reduce the nanofilm. The reduction condition is HI as the reducing agent, and 90 ° C for 2 hours .

[0046] (2) AlCl 3 (183°C) is uniformly vapor-deposited on the surface of the nano-film, cooled, solidified and shrunk to obtain an exfoliated graphene nano-film.

[0047] (3) With a heating rate below 20° C. / min, the graphene oxide film is heated by infrared radiation to 1300° C. and kept for 4 hours to obtain a graphene film layer with high defects and high terahertz transmission, and the defect content is 50% ( figure 1 , its SEM image is shown in Image 6 Shown); graphene oxide film is heated up to 2000 ℃, and keeps 4h, to reduce the defect of graphene oxide film to below 0.3% ( figure 1 ). As the temperature increases, the graphene structure is gradually repaired, and the terahertz reflection of the gr...

Embodiment 3

[0050] (1) Assemble graphene oxide (0.5ug / mL) on the mixed cellulose ester substrate by suction filtration to form a graphene film with a thickness of 180 atomic layers, and then chemically reduce the nanofilm.

[0051] (2) AlCl 3 (183°C) is evenly evaporated on the surface of the nanometer film, cooled and solidified to etch the substrate (mixed cellulose ester as the substrate), and the exfoliated graphene nanofilm is obtained.

[0052] (3) With a heating rate of 30°C / min, the graphene oxide film was heated to 1400°C by microwave heating, and kept for 2h to obtain a graphene film layer with high defects and high terahertz transmission, with a defect content of 20%; the graphite oxide The temperature of the olefin film was raised to 3000 °C and kept for 1 h to reduce the defects of the graphene oxide film to 0.3%.

[0053] (4) Attach the obtained high-defect graphene film and low-defect graphene film to the front and back of the polyimide film to form a flexible terahertz ab...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a preparation method of a light modulation terahertz absorption device with an all-carbon structure, and the method comprises the steps: obtaining an independent support graphene nano material through simple chemical assembly and reduction and molecular crystal auxiliary transfer, and obtaining a defect-controllable graphene film structure through the regulation and controlof sintering temperature and time. The film has good terahertz permeability or shielding property. The thin-film polyimides of different structures are assembled layer by layer to form a sandwich structure, the sandwich structure is placed under terahertz light, the terahertz transmission spectrum peak position changes along with increase of the concentration of molecules dropwise added to the surface, so that a terahertz molecular detection device can be prepared and used for detecting molecular residues. And meanwhile, the double graphene nano-film layers can be subjected to optical regulation and control and can be used for detecting the change of optical intensity. Besides, two etching methods are combined, the specific surface area is increased at different scales, the change of theelectrical property of the material is greater and the change of a terahertz signal is also greater under the dropwise addition of the same molecular content detection.

Description

technical field [0001] The invention relates to a preparation method of a light modulation terahertz absorbing device with an all-carbon structure. Background technique [0002] Terahertz molecular detection uses terahertz as the basic light source to detect the influence of molecules on the conductivity of terahertz metamaterials. Its advantage is that it can detect the concentration of drug molecules quickly, in batches, and in real time. In the field of terahertz molecular detection, conventionally used materials are metals and semimetals, which have two serious problems: first, they have poor molecular affinity, especially with molecules containing conjugated structures; second, they cannot carry out optical signals. Modulation, unable to respond to changes in the external optical environment. [0003] Recently, the rapid rise of single-layer graphene provides an alternative material for terahertz molecular detection, which has good phototunability, electrical modulati...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G02B5/00G02F1/17
CPCG02B5/003G02F1/17Y02P70/50
Inventor 彭蠡文章高超
Owner HANGZHOU GAOXI TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap