Preparation method of high-performance gallium oxide field effect transistor with insulating substrate

Abstract

The invention discloses a preparation method of a high-performance gallium oxide field effect transistor with an insulating substrate, and mainly solves the problems that the cost of growing a Ga2O3 thin film by an existing epitaxial method is high, and lattice mismatch and thermal mismatch between the substrate and the thin film are difficult to eliminate. The method comprises the steps of selecting an n-type beta-Ga2O3 single crystal substrate, cleaning the n-type beta-Ga2O3 single crystal substrate, and obtaining a nano-scale beta-Ga2O3 thin film through multiple times of mechanical stripping; soaking the insulating substrate in acetone to remove organic pollutants and the like, transferring the nano-scale beta-Ga2O3 thin film to the insulating substrate, and sequentially performing photoetching and metal layer deposition on the thin film to form a source end electrode and a drain end electrode; and depositing Al2O3 on the surface of a sample piece with the manufactured source and drain electrodes, sequentially carrying out photoetching and metal layer deposition on the surface of Al2O3 to form a gate electrode, and completing manufacturing of the gallium oxide-based device. Thepreparation method is simple in preparation process and low in cost, and the prepared Ga2O3 film is high in quality and can be used for preparing a high-performance gallium oxide-based device.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a method for preparing a high-performance gallium oxide field-effect transistor on an insulating substrate, which can be used for preparing nanoscale gallium oxide thin films and high-performance gallium oxide-based devices with good interface contact. [0002] technical background [0003] Gallium oxide has five crystal forms of α, β, γ, δ and ε, among which the monoclinic β-Ga 2 o 3 With the best thermal stability, other metastable phases can easily transform into β-Ga at high temperature 2 o 3 , so most of the current research is around β-Ga 2 o 3 Expanded. β-Ga 2 o 3 It has a large forbidden band width of 4.4-4.9eV. This feature makes its ionization rate low and the breakdown field strength is high, which is about 8MV / cm, which is more than 20 times that of Si and more than twice that of SiC and GaN. In addition, β-Ga 2 o 3 The quality facto...

AI Technical Summary

Problems solved by technology

Ga 2 o 3 The method of thin film is mainly through the epitaxy method, including metal organic chemical vapor deposition method MOCVD, molecular beam epitaxy MBE, pulsed laser deposition method PLD, etc., among them: the deposition rate of metal organic chemical vapor deposition method MOCVD is not high, and the reaction source and The gas after the reaction is toxic, flammable and explosive. It is difficult to deposit a thin film on a certain surface of a device or to deposit a thin film locally, and the substrate temperature is required to be high during film formation, which limits its application; molecular beam epitaxy MBE method Higher quality Ga can be obtained 2 o 3 Single crystal thin film is suitable for the preparation of nano-scale controlled composition and doping distribution structure, but the preparation process needs to be in a high vacuum environment, and the maintenance period is long, and the production cost is high; the film grown by pulse sputtering deposition method PLD has surface particles problem, the prepared Ga 2 o 3 The problem of non-uniformity of the film

[0005] In general, the epitaxial growth of Ga 2 o 3 The disadvantages of the film are mainly reflected in the high cost, the large lattice mismatch and thermal mismatch between the substrate and the film are difficult to eliminate, resulting in the epitaxial growth of Ga 2 o 3 The lower quality of single crystal thin films affects the β-Ga 2 o 3 FET device performance limits the Ga 2 o 3 Practical application of high-power based devices

Images