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Preparation method of novel InGaN-based photo-anode

A photoanode, a new type of technology, applied in the field of semiconductor heterojunction preparation, can solve the problems of high stress in InGaN layer, limited photolysis water efficiency, strong polarization effect, etc., achieve high crystal quality, easy process conditions, and small polarization effect of effect

Active Publication Date: 2020-12-18
XI'AN POLYTECHNIC UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the shortcomings of the InGaN layer prepared by hetero-epitaxy, such as large stress and strong polarization effect, its photolytic water splitting efficiency is limited.

Method used

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  • Preparation method of novel InGaN-based photo-anode
  • Preparation method of novel InGaN-based photo-anode
  • Preparation method of novel InGaN-based photo-anode

Examples

Experimental program
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Effect test

Embodiment 1

[0035] On the epitaxial substrate, a low-temperature GaN buffer layer and a GaN multilayer structure were grown successively, the growth temperature was 1070°C, the thickness of the low-doped GaN layer and the high-doped GaN layer were both 52nm, and the doping concentration of the low-doped GaN layer was 4.0× 10 15 , the doping concentration of the highly doped GaN layer is 2.5×10 19 , and the number of cycles is 7.

[0036] In a 0.1mol / L nitric acid solution, turn on the photoelectrochemical etching equipment, turn on the ultraviolet lamp, and set the etching voltage to 16V; use platinum wire as the cathode, and GaN multilayer structure as the anode, etch at a constant voltage for 40 Minutes; after the etching is finished, turn off the photoelectrochemical etching equipment; rinse the anode sample with deionized water, and dry it with nitrogen to obtain a mesoporous GaN mirror;

[0037] Using a mesoporous GaN mirror as a substrate, place the substrate in an MOCVD growth ch...

Embodiment 2

[0039] The low-temperature GaN buffer layer and the GaN multilayer structure were grown successively on the epitaxial substrate, the growth temperature was 1070°C, and the doping concentration of the low-doped GaN layer was 5.0×10 17 cm -3 , the thickness is 55nm, and the doping concentration of the highly doped GaN layer is 3.0×10 19 cm -3 , with a thickness of 52nm, a GaN multilayer structure is prepared;

[0040] In a 0.2mol / L nitric acid solution, turn on the photoelectrochemical etching equipment, turn on the white light, and set the etching voltage to 10V; use platinum wire as the cathode and GaN multilayer structure as the anode, etch at a constant voltage for 80 Minutes; after the etching is finished, turn off the photoelectrochemical etching equipment; rinse the anode sample with deionized water, and dry it with nitrogen to obtain a mesoporous GaN mirror;

[0041] Using a mesoporous GaN mirror as a substrate, place the substrate in an MOCVD growth chamber and grow ...

Embodiment 3

[0043] A low-temperature GaN buffer layer and a GaN multilayer structure were grown successively on the epitaxial substrate at a growth temperature of 1070°C, and the doping concentration and thickness of lightly doped GaN were 5.0×10 15 cm -3 and 50nm, heavily doped GaN doping concentration and thickness are 1×10 19 cm -3 and 65nm, a GaN multilayer structure was prepared. In a 0.3mol / L nitric acid solution, the photoelectrochemical etching equipment was turned on, and the etching voltage was set to 15V; the platinum wire was used as the cathode, and the GaN multilayer structure was used as the anode. , constant voltage etching for 20 minutes; after the etching, turn off the photoelectrochemical etching equipment; rinse the anode sample with deionized water, and dry it with nitrogen to obtain a mesoporous GaN mirror;

[0044] Using a mesoporous GaN mirror as a substrate, place the substrate in an MOCVD growth chamber and grow GaN at 1050 °C with a doping concentration of 8×1...

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Abstract

The invention discloses a preparation method of a novel InGaN-based photo-anode, which is specifically implemented according to the following steps of: 1, carrying out constant-voltage etching on a GaN multi-layer structure by adopting a photoelectrochemical etching technology in an acid solution to prepare a mesoporous GaN mirror; and 2, by taking a mesoporous GaN mirror as a substrate, firstly,epitaxially growing an InGaN / GaN layer by adopting an MOCVD technology, modulating an In component through energy band engineering, modulating a band gap of the In component, and then, evaporating anohmic contact electrode by adopting an electron beam evaporation technology to prepare an InGaN-based photo-anode. and the method provided by the invention can be used for preparing the photo-anode electrode with low starting voltage, high efficiency and strong stability.

Description

technical field [0001] The invention belongs to the technical field of semiconductor heterojunction preparation, and in particular relates to a preparation method of a novel InGaN-based photoanode. Background technique [0002] Compared with traditional photoelectrodes (such as: Si, TiO 2 , ZnO, etc.), InGaN-based thin film materials have the advantages of high quantum efficiency and good stability in the visible light region, which has attracted widespread attention. However, due to the shortcomings of the InGaN layer prepared by heteroepitaxy, such as large stress and strong polarization effect, its photolytic water splitting efficiency is limited. The mesoporous GaN mirror has high light reflection effect, large stress relaxation, and low defect density. Using it as a substrate, the grown InGaN-based thin film exhibits large stress relaxation, small polarization effect, and high crystal quality. It is expected to significantly improve the conversion efficiency of InGaN-...

Claims

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Application Information

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IPC IPC(8): C25B11/03C25B11/04C25B11/06C25F3/12C23C16/34C23C14/24C23C14/18C23C28/00
CPCC25B1/04C25F3/12C23C16/303C23C14/24C23C14/18C23C28/32C23C28/34Y02P20/133Y02E60/36
Inventor 曹得重
Owner XI'AN POLYTECHNIC UNIVERSITY
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