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Based on Nife 2 o 4 /sic ultraviolet photodiode and preparation method

A diode and ultraviolet light technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problem of low P-type silicon carbide doping concentration, and achieve the effect of improving photoelectric conversion efficiency, high withstand voltage level, and reliability.

Active Publication Date: 2022-04-12
西安千月电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In general, the P-type doping of silicon carbide is doped with Al. Since Al has a high ionization energy at room temperature, it cannot be completely ionized at room temperature, resulting in a low doping concentration of P-type silicon carbide.

Method used

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  • Based on Nife <sub>2</sub> o <sub>4</sub> /sic ultraviolet photodiode and preparation method
  • Based on Nife <sub>2</sub> o <sub>4</sub> /sic ultraviolet photodiode and preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0045] The present invention is based on a NiFe 2 o 4 / SiC ultraviolet photodiode preparation method, the flow chart is as figure 2 As shown, the specific steps are as follows:

[0046] Step 1. Clean the N-type SiC substrate, and dry it for later use;

[0047] The cleaning process in step 1 is: cleaning the N-type SiC substrate step by step with cleaning solution, 40% hydrofluoric acid solution, alcohol, and deionized water in sequence.

[0048] Step 2, growing an intrinsic 4H-SiC homoepitaxial layer on the N-type SiC substrate cleaned in the step 1;

[0049] In step 2, when the intrinsic 4H-SiC homoepitaxial layer is grown on the N-type SiC substrate, chemical vapor deposition equipment is used, silane is used as the Si source gas, propane is used as the C source gas, and hydrogen is used as the carrier gas, wherein the hydrogen The flow rate is 40-60slm, the C / Si ratio is 1:1, the growth temperature is 1520°C, and the growth time is 2min.

[0050] Step 3, performing P-...

Embodiment 2

[0057] The present invention is based on a NiFe 2 o 4 / SiC ultraviolet photodiode preparation method, the flow chart is as figure 2 As shown, the specific steps are as follows:

[0058] Step 1. Clean the N-type SiC substrate, and dry it for later use;

[0059] The cleaning process in step 1 is: cleaning the N-type SiC substrate step by step with cleaning solution, 40% hydrofluoric acid solution, alcohol, and deionized water in sequence.

[0060] Step 2, growing an intrinsic 4H-SiC homoepitaxial layer on the N-type SiC substrate cleaned in the step 1;

[0061] In step 2, when the intrinsic 4H-SiC homoepitaxial layer is grown on the N-type SiC substrate, chemical vapor deposition equipment is used, silane is used as the Si source gas, propane is used as the C source gas, and hydrogen is used as the carrier gas, wherein the hydrogen The flow rate is 40-60slm, the C / Si ratio is 3:2, the growth temperature is 1600°C, and the growth time is 5min.

[0062] Step 3, performing P-...

Embodiment 3

[0069] The present invention is based on a NiFe 2 o 4 / SiC ultraviolet photodiode preparation method, the flow chart is as figure 2 As shown, the specific steps are as follows:

[0070] Step 1. Clean the N-type SiC substrate, and dry it for later use;

[0071] The cleaning process in step 1 is: cleaning the N-type SiC substrate step by step with cleaning solution, 40% hydrofluoric acid solution, alcohol, and deionized water in sequence.

[0072] Step 2, growing an intrinsic 4H-SiC homoepitaxial layer on the N-type SiC substrate cleaned in the step 1;

[0073] In step 2, when the intrinsic 4H-SiC homoepitaxial layer is grown on the N-type SiC substrate, chemical vapor deposition equipment is used, silane is used as the Si source gas, propane is used as the C source gas, and hydrogen is used as the carrier gas, wherein the hydrogen The flow rate is 50slm, the C / Si ratio is 2.5:2, the growth temperature is 1580°C, and the growth time is 4min.

[0074] Step 3, performing P-t...

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Abstract

The invention discloses a NiFe-based 2 o 4 / SiC ultraviolet photodiode, the invention also discloses a NiFe-based 2 o 4 / SiC ultraviolet photodiode preparation method, firstly, the N-type SiC substrate is cleaned, and then dried for use after cleaning; then, the intrinsic 4H-SiC homoepitaxial layer is grown on the cleaned N-type SiC substrate; The resulting intrinsic 4H‑SiC homoepitaxial layer was subjected to p-type NiFe 2 o 4 Heteroepitaxial layer growth; in the obtained P-type NiFe 2 o 4 Make the top electrode on the heteroepitaxial layer; make the bottom electrode on the lower surface of the N-type SiC substrate, and finally form NiFe 2 o 4 / SiC UV photodiode. The diode of the invention has good photoelectric response, good stability, sensitive response and good process repeatability.

Description

technical field [0001] The invention belongs to the field of ultraviolet photoelectric detection application technology, in particular to a NiFe-based 2 o 4 / SiC ultraviolet photodiode, the present invention also relates to a NiFe-based 2 o 4 / SiC UV photodiode preparation method. Background technique [0002] Ultraviolet detection technology is one of the photoelectric detection technologies developed rapidly in recent years. Ultraviolet detectors have important uses in missile early warning, water quality monitoring and disaster weather forecasting. Silicon carbide (4H-SiC), as a representative of the third-generation wide bandgap semiconductor material, has properties such as large bandgap, high breakdown electric field, high thermal conductivity, high electron saturation mobility, and small dielectric constant, making it widely used in Ultraviolet photodetection devices, power electronics and lasers have great application potential. [0003] 4H-SiC PIN UV detector ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/105H01L31/0336H01L31/18
CPCH01L31/105H01L31/0336H01L31/18
Inventor 胡继超许蓓贺小敏王曦李连碧
Owner 西安千月电子科技有限公司
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