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A lattice-mismatched triple-junction gallium arsenide solar cell and its manufacturing method

A technology of lattice mismatch and solar cells, which is applied in the field of solar cells, can solve problems such as incomplete stress release, many production steps, and reduced performance of mid-bottom tunneling junctions, so as to achieve the effects of reducing damage and shortening the production cycle of products

Active Publication Date: 2021-02-05
NANCHANG KAIXUN PHOTOELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] (1) There are many production steps and the growth time is long;
[0004] (2) Baking during the growth process reduces the performance of the midsole tunnel junction;
[0005] (3) Incomplete stress release may easily cause epitaxial wafer warping;
[0006] (4) Crystal quality is not good enough

Method used

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  • A lattice-mismatched triple-junction gallium arsenide solar cell and its manufacturing method
  • A lattice-mismatched triple-junction gallium arsenide solar cell and its manufacturing method
  • A lattice-mismatched triple-junction gallium arsenide solar cell and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] S1: On a P-type Ge substrate, at 720°C, by pH 3 In the form of diffusion, the emitter area of ​​the bottom cell is formed. The thickness of the emitter area is 0.1 μm, and then the temperature is lowered to 640 ° C to grow a GaInP nucleation layer with a thickness of 0.01 μm. The nucleation layer also serves as the window layer of the bottom cell;

[0037] S2: Increase the temperature to 650°C to grow GaAs / In 0.01 GaAs buffer layer, GaAs thickness is 0.1μm, In 0.01 GaAs thickness is 0.1μm;

[0038] S3: The temperature is lowered to 560°C, and the mid-bottom tunneling junction is grown, and the mid-bottom tunneling junction is N ++ GaAs / P ++ GaAs structure, where N ++ GaAs has a thickness of 0.01 μm and a doping concentration of 1×10 19 / cm 3 , the dopant is a combination of Te and Si; P ++ The thickness of GaAs is 0.01 μm, and the doping concentration is 2×10 19 / cm 3 , the dopant is C;

[0039] S4: The temperature is increased to 650°C, and a GaAs buffer layer ...

Embodiment 2

[0047] S1: On a P-type Ge substrate, at 720°C, by pH 3 In the form of diffusion, the emitter area of ​​the bottom cell is formed. The thickness of the emitter area is 0.3 μm, and then the temperature is lowered to 640 ° C to grow an AlGaInP nucleation layer with a thickness of 0.02 μm. The nucleation layer also serves as the window layer of the bottom cell;

[0048] S2: Increase the temperature to 650°C to grow GaAs / In 0.01 GaAs buffer layer, GaAs thickness is 0.1μm, In 0.01 GaAs thickness is 0.4μm;

[0049] S3: The temperature is lowered to 560°C, and the mid-bottom tunneling junction is grown, and the mid-bottom tunneling junction is N ++ GaAs / P ++ GaAs structure, where N ++ GaAs has a thickness of 0.02 μm and a doping concentration of 3×10 19 / cm 3 , the dopant is a combination of Te and Se; P ++ The thickness of GaAs is 0.02 μm, and the doping concentration is 5×10 19 / cm 3 , the dopant is Zn;

[0050] S4: The temperature is increased to 650°C, and a GaAs buffer ...

Embodiment 3

[0058] S1: On a P-type Ge substrate, at 720°C, by pH 3 In the form of diffusion, the emitter area of ​​the bottom cell is formed. The thickness of the emitter area is 0.4 μm, and then the temperature is lowered to 640 ° C to grow a GaInP nucleation layer with a thickness of 0.03 μm. The nucleation layer also serves as the window layer of the bottom cell;

[0059] S2: Increase the temperature to 650°C to grow GaAs / In 0.01 GaAs buffer layer, GaAs thickness is 0.8μm, In 0.01 GaAs thickness is 0.8μm;

[0060] S3: The temperature is lowered to 560°C, and the mid-bottom tunneling junction is grown, and the mid-bottom tunneling junction is N ++ GaAs / P ++ GaAs structure, where N ++ The thickness of GaAs is 0.03μm, and the doping concentration is 5×10 19 / cm 3 , the dopant is a combination of Se and Si; P ++ GaAs has a thickness of 0.03 μm and a doping concentration of 1×10 20 / cm 3 , the dopant is Mg;

[0061] S4: The temperature is increased to 650°C, and a GaAs buffer laye...

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Abstract

The invention discloses a lattice-mismatched triple-junction gallium arsenide solar cell and a manufacturing method thereof, which include a Ge substrate, a bottom cell, a GaAs / InGaAs buffer layer, a mid-bottom tunnel junction, and a GaAs buffer layer in sequence from bottom to top. In(Al)GaAs buffer layer, DBR, middle cell, middle top tunnel junction, top cell and capping layer; among them, In(Al)GaAs buffer layer consists of InAlAs nucleation layer, InAlAs buffer layer, superlattice, low Al The components are composed of InAlGaAs and InGaAs; the capping layer is composed of InGaAs and GaAs. By introducing an InAlGaAs buffer layer, stress can be effectively released and dislocations can be filtered. While ensuring the crystal quality of the solar cell material, the lattice constant of the epitaxial material can quickly reach the target value, reducing the product production cycle and reducing tunneling to the bottom of the product. Junction damage, etc. At the same time, through the thickness of GaAs in the capping layer, the warpage of the entire epitaxial wafer is adjusted to obtain a flat epitaxial wafer.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a lattice-mismatched triple-junction gallium arsenide solar cell and a manufacturing method. Background technique [0002] Since October 4, 1957, the world's first artificial earth satellite "Satellite 1" entered space, in just a few decades, space technology has made great progress, and the high power of the spacecraft power system , high reliability, long life and miniaturization also put forward new requirements. Gallium arsenide solar cells have higher photoelectric conversion efficiency, better high temperature resistance, and stronger space radiation resistance. They have successfully replaced Si solar cells and become my country's aerospace vehicles, such as artificial satellites, spacecraft, space laboratories, etc. High-performance and long-life generalized space main power supply. In China, through the continuous efforts of several generations of astronauts, the co...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0304H01L31/0352H01L31/078H01L31/18
CPCH01L31/03042H01L31/03046H01L31/035236H01L31/03529H01L31/078H01L31/1844H01L31/1852Y02E10/544Y02P70/50
Inventor 徐培强张银桥王向武潘彬
Owner NANCHANG KAIXUN PHOTOELECTRIC CO LTD
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