Silicon wafer thermal oxidation wet oxygen process

Abstract

The invention relates to a silicon wafer thermal oxidation wet oxygen process. The silicon wafer thermal oxidation wet oxygen process comprises a step and a method for determining the high-purity water filling amount in the silicon wafer thermal oxidation wet oxygen process, and specifically comprises the following steps of: arranging a metering pump and a gas nozzle at the rear part of a furnacetube of an oxidation furnace; injecting high-purity water into the gas nozzle through the metering pump; atomizing the injected high-purity water by the gas nozzle into water vapor, injecting the water vapor into the furnace tube of the oxidation furnace, and decomposing the water vapor into hydrogen and oxygen after entering the furnace tube of the oxidation furnace to react with a silicon waferto form an oxidation film on the surface of the silicon wafer; and controlling the growth thickness of the oxidation film on the surface of the silicon wafer by adjusting the amount of the pure waterinjected into the furnace tube of the oxidation furnace tube by the metering pump. According to the invention, the safety and reliability of the silicon wafer oxidation wet oxygen process are improved, the pollution introduction probability in the wet oxygen process is reduced, and the growth thickness of the oxidation film in the silicon wafer oxidation process can be accurately controlled by controlling the flow of pure water injected by the metering pump and the wet oxygen process time.

Description

technical field [0001] The invention belongs to the technical field of semiconductor silicon wafer production, and in particular relates to a silicon wafer thermal oxidation wet oxygen process. Background technique [0002] At present, the thermal oxidation of silicon wafers is to grow a high-quality oxide layer on the surface of silicon wafers, which is of great significance to the entire semiconductor integrated circuit manufacturing process. It is not only used as a masking layer for ion implantation or thermal diffusion, but also a passivation layer to ensure that the surface of the device is not affected by the surrounding atmosphere. It is not only an insulating layer for electrical isolation between devices, but also a MOS process and multi-layer metallization. The main component of a system that guarantees electrical isolation. Therefore, understanding the growth mechanism of the silicon oxide layer, controlling and repeating the method of growing a high-quality sil...

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Problems solved by technology

[0004] However, there are major disadvantages in the traditional two process methods: the first is the wet oxygen process by heating the bubbler bottle, firstly, the bubbler bottle is a closed pressure vessel during the heating process, and there are great safety hazards; secondly, the wet oxygen steam The electromagnetic valve core used in the road is made of metal material, which is easy to cause pollution to the system; in addition, the wet oxygen process of heating the bubbling bottle to evaporate water vapor cannot accurately control the amount of wet oxygen vapor, and the process stability is not good

Another wet oxygen process is to pass high-purity hydrogen and oxygen into the high-temperature quartz tube. Hydrogen is a flammable and explosive gas, and there is also a big safety hazard when placed on site.

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