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Electro-optic crystal film, preparation method thereof and electro-optic modulator

A technology of electro-optic crystals and thin films, applied in light guides, optics, instruments, etc., can solve the problems of large optical transmission loss, achieve the effects of reducing diffuse reflection, simple process, and ensuring uniformity and integrity

Pending Publication Date: 2020-11-20
JINAN JINGZHENG ELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The application provides an electro-optic crystal thin film and its preparation method, and an electro-optic modulator to solve the problem of large optical transmission loss caused by the existing use of BCB resin as an adhesive layer

Method used

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  • Electro-optic crystal film, preparation method thereof and electro-optic modulator
  • Electro-optic crystal film, preparation method thereof and electro-optic modulator
  • Electro-optic crystal film, preparation method thereof and electro-optic modulator

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preparation example Construction

[0060] Specifically, such as Figure 5 Shown, described preparation method comprises the following steps:

[0061] Step 1. Prepare a silicon-on-insulator structure, and etch the top silicon layer of the silicon-on-insulator structure to form a silicon waveguide layer; wherein, the silicon-on-insulator structure is a silicon substrate layer, a silicon dioxide layer, and a silicon dioxide layer from bottom to top. Top layer silicon; groove structure formed in the silicon waveguide layer after etching.

[0062] In this application, the silicon-on-insulator structure is also called SOI wafer, and an SOI wafer structure with a size of 4 inches can be selected. The SOI wafer structure is: 50nm-50μmSi / 50nm-5μmSiO from top to bottom 2 / Si, the top layer of silicon is etched by dry etching, and the top layer of silicon is etched into a ridge strip waveguide; wherein, the top layer of silicon is completely etched or partially etched.

[0063] If complete etching is used, the processed...

Embodiment 1

[0079] (1) Prepare an SOI wafer with a size of 4 inches, a thickness of 0.5mm and a smooth surface. The SOI wafer structure is 220nmSi / 2μmSiO from top to bottom 2 / Si. The top layer silicon of the SOI wafer is etched by dry etching, the top layer SI is completely etched, and a ridge-shaped strip waveguide is etched out. The size of the ridge-shaped strip waveguide is 1 μm in width*220 nm in thickness. After etching A groove structure is formed in the silicon waveguide layer, and the height of the groove structure is the thickness of the ridge strip waveguide.

[0080] (2) Clean the ridge-shaped strip waveguide surface of the SOI wafer after etching, and deposit a layer of 2.5 μm SiO on the ridge-shaped silicon waveguide surface by PECVD 2 , filling the groove structure and covering the silicon waveguide layer to form a cladding isolation layer.

[0081] (3) For the SiO covered ridge waveguide in step (2) 2 Use CMP process to planarize, repeat PECVD to deposit silicon dioxi...

Embodiment 2

[0088] (1) Prepare an SOI wafer with a size of 4 inches, a thickness of 0.5mm and a smooth surface. The SOI wafer structure is 220nmSi / 2μmSiO from top to bottom 2 / Si. The top layer Si of the SOI wafer is etched by dry etching, the top layer Si is completely etched, and a ridge-shaped strip waveguide is etched out. The size of the ridge-shaped strip waveguide is 1 μm in width*220 nm in thickness. After etching A groove structure is formed in the silicon-based groove waveguide layer, and the height of the groove structure is the thickness of the ridge waveguide.

[0089] (2) Clean the ridge-shaped strip waveguide surface of the SOI wafer after etching, and deposit a layer of 2.5 μm SiO on the ridge-shaped silicon waveguide surface by PECVD 2 , filling the groove structure and covering the silicon waveguide layer to form a cladding isolation layer.

[0090] (3) For the SiO covered ridge silicon waveguide in step (2) 2 Use CMP process to planarize, repeat PECVD to deposit sil...

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Abstract

The invention provides an electro-optical crystal film, a preparation method thereof and an electro-optical modulator, and the electro-optical crystal film sequentially comprises a silicon substrate layer, a silicon dioxide layer, a silicon waveguide layer, a coating isolation layer and a functional film layer from the bottom to the top. The refractive index of the coating isolation layer is lowerthan that of the functional film layer, and the coating isolation layer is subjected to planarization processing and can be bonded with the functional film layer. The coating isolation layer is adopted to replace an adhesive layer in the prior art, on one hand, the coating isolation layer can be subjected to planarization processing, the surface roughness of the side, close to the functional filmlayer, of the coating isolation layer is reduced, diffuse reflection can be reduced, and therefore light transmission loss is reduced; and on the other hand, the coating isolation layer and the functional film layer are combined in a bonding manner, so that the uniformity and the integrity of the functional film layer are ensured.

Description

technical field [0001] The application relates to the technical field of semiconductor preparation, in particular to an electro-optic crystal thin film, a preparation method thereof, and an electro-optic modulator. Background technique [0002] Silicon-based electro-optic modulators are important components of transceivers in optical communication and optical interconnection systems. They are the prerequisites for converting electrical signals to optical signals and realizing high-speed information transmission and processing on optoelectronic integrated chips. [0003] Silicon-based electro-optic modulators are usually integrated with electro-optic crystal thin films, so the preparation of electro-optic crystal thin films is of great significance for silicon-based electro-optic modulators. At present, the electro-optic crystal film is usually prepared by the following process: first, a silicon oxide film layer is prepared above the silicon crystal substrate layer by an oxid...

Claims

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Application Information

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IPC IPC(8): G02F1/035G02F1/03G02B6/122G02B6/136
CPCG02F1/035G02F1/0311G02B6/122G02B6/136G02B2006/12142
Inventor 张秀全刘桂银王金翠李真宇杨超连坤
Owner JINAN JINGZHENG ELECTRONICS
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