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Dynamic frequency selective surface structure and preparation method thereof

A frequency selective surface and dynamic frequency selection technology, applied in the electromagnetic field, can solve problems such as the deterioration of the performance of integrated circuit components

Active Publication Date: 2020-11-10
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] For the problems existing in the above passive PFSS structure and active AFSS structure, the object of the present invention is to provide a dynamic frequency selective surface structure and a preparation method thereof, wherein the unit structure composition of the dynamic frequency selective surface and their arrangement, connection Improve the relationship, etc., and use the conductive performance adjustment component to realize the change of the equivalent frequency selective surface unit structure or the series / parallel conversion of the array by changing the ambient temperature, incident light intensity, gas composition or the magnetic induction intensity of the external magnetic field. Compared with the existing technology Compared with solving the performance degradation problem caused by the use of integrated circuit components on the active frequency selective surface, it can effectively realize the dynamic change of the selective transmission frequency, and the preparation method of the dynamic frequency selective surface structure is simple, which can avoid the use of welding

Method used

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  • Dynamic frequency selective surface structure and preparation method thereof
  • Dynamic frequency selective surface structure and preparation method thereof
  • Dynamic frequency selective surface structure and preparation method thereof

Examples

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example 1

[0059] Select a dielectric substrate F4B-2 sample with a size of 500mm×500mm, a thickness of 0.5mm, a relative permittivity ε=2.65, and a 0.03mm thick copper film on the surface, and use laser selective etching technology on the sample. Selectively remove the copper film material to prepare a ring-shaped unit structure with gaps arranged in a radius of 2.3mm, an inner radius of 1.9mm, and a period (that is, the distance from the center of adjacent units to the center) of 5mm to form a A band-pass FSS periodic array with fixed resonant frequency. Then, laser-induced forward transfer (LIFT) was used to deposit the undoped ion VO on the lower surface of the glass substrate. 2 The thin film is transferred to the outer wall of the inner ring of the gap ring unit structure with high precision, and is in close contact with the copper film of the inner ring, VO 2 The width of the film is 0.2mm, the thickness is 0.03mm, and it is prepared into a composite unit structure. When the amb...

example 2

[0061] Select a dielectric substrate F4B-2 sample with a size of 500mm×500mm, a thickness of 0.5mm, a relative permittivity ε=2.65, and a 0.03mm thick copper film on the surface, and use laser selective etching technology on the sample. Selectively remove the copper film material to prepare a ring-shaped unit structure of copper sheets with an outer ring radius of 2.3mm, an inner ring radius of 1.9mm, and a period of 5mm to form a band-stop FSS periodic array with a fixed resonant frequency . Then, laser-induced forward transfer (LIFT) was used to deposit the undoped ion VO on the lower surface of the glass substrate. 2 The thin film is transferred to the outer wall of the inner ring of the copper ring unit structure with high precision, and is in close contact with the inner ring copper film, VO 2 The width of the film is 0.3mm, the thickness is 0.03mm, and it is prepared into a composite unit structure. When the ambient temperature is lower than 341K, the FSS reflection re...

example 3

[0063] Select a dielectric substrate F4B-2 sample with a size of 500mm×500mm, a thickness of 0.5mm, a relative permittivity ε=2.65, and a 0.03mm thick copper film on the surface, and use laser selective etching technology on the sample. The copper film material is selectively removed, and a ring-shaped unit structure with an outer ring radius of 2.3 mm, an inner ring radius of 1.9 mm, and a period of 5 mm is prepared to form a band-pass FSS periodic array with a fixed resonance frequency. Then, using laser-induced forward transfer technology (LIFT), the doped 10% Mo ion VO deposited on the lower surface of the glass substrate 2 The thin film (phase transition temperature is 308K) is transferred to the outer wall of the inner ring of the gap ring unit structure with high precision, and is in close contact with the copper film of the inner ring, doped with Mo ions VO 2 The width of the film is 0.1mm, and the thickness is 0.03mm; and then the laser-induced forward transfer techno...

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Abstract

The invention belongs to the technical field of electromagnetism, and discloses a dynamic frequency selective surface structure and a preparation method thereof. The structure is composed of a passivefrequency selective surface base body and a conductive performance adjusting assembly located on the base body, wherein the conductive performance adjusting assembly is located in a single passive frequency selective surface unit structure, or is used for connecting two adjacent passive frequency selective surface units, and the conductive performance adjusting assembly can change between a conductor and an insulator under the action of changing environmental conditions such as temperature or illumination intensity, so that the unit structure of the frequency selective surface conductive array is dynamically changed. According to the dynamic frequency selective surface structure, by improving the unit structure composition of the dynamic frequency selective surface and the setting mode and the connection relationship of the unit structure composition, the problems of performance deterioration and the like caused by using an integrated circuit element on the active frequency selectivesurface can be effectively solved, so that the dynamic change of the selective transmission frequency is effectively realized.

Description

technical field [0001] The invention belongs to the field of electromagnetic technology, and more specifically relates to a dynamic frequency selective surface structure and a preparation method thereof. Background technique [0002] How to reduce the radar cross section (Radar Cross Section, RCS) of the target is in the development of radar stealth technology, stealth radome, multi-band antenna reflector, wireless communication system, antenna pattern control, building electromagnetic control or enhanced optoelectronic devices, etc. It plays a vital role in the field of electromagnetic wave regulation. In recent years, although many new structural absorbing materials have been proposed, the Frequency Selective Surface (FSS) absorber has advantages in design flexibility, wide frequency range, broadband performance, and online adjustable performance. , has attracted the attention of all parties. The structure of the frequency selective surface FSS is to prepare metal resona...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/35C23C14/02C23C16/40C23C16/02
CPCC23C14/083C23C14/35C23C14/022C23C16/405C23C16/0227
Inventor 邓磊敏段军杨少睿熊伟盘亚楠
Owner HUAZHONG UNIV OF SCI & TECH
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