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Method for preparing high-purity ruthenium target EBSD samples

A kind of sample and high-purity technology, which is applied in the field of preparing high-purity ruthenium target EBSD samples, can solve the problems of false test results, high melting point, complexity, etc., and achieve the effect of not being easy to clean

Pending Publication Date: 2020-10-30
GUOBIAO BEIJING TESTING & CERTIFICATION CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the commonly used sample preparation methods usually adopt electrolytic polishing or chemical corrosion. For the precious metal ruthenium, it has a high melting point and high brittleness. The target is generally prepared by hot pressing and sintering, and there are usually certain void defects, which are easy to contaminate the test surface during the sample preparation process and bring false impressions to the test results

Method used

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  • Method for preparing high-purity ruthenium target EBSD samples
  • Method for preparing high-purity ruthenium target EBSD samples

Examples

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Effect test

Embodiment 1

[0034] A method for preparing a high-purity ruthenium target EBSD sample, the specific steps of the preparation method are:

[0035] Step 1: cutting the high-purity ruthenium target wire obtained by hot-pressing sintering into a sample to be tested, and the size of the sample is 1cm×1cm×1cm.

[0036] Step 2. Mechanically polish the sample to be tested as described in step 1, and polish the sample on water sandpaper of 150 mesh, 500 mesh, 800 mesh, 1500 mesh, and 2000 mesh in turn, and each sandpaper is ground to the sample Rinse the sample with clean water when the scratches on the surface are uniform and in one direction, and rotate the sample by 90°. Change to a sandpaper for fine grinding, and finally rinse with clean water.

[0037] Step 3. Put the rinsed sample on a polishing machine equipped with polishing flannelette for polishing, add W2.5 and W1.0 polishing pastes in sequence, and polish until the last scratch disappears. The total polishing time is 4 minutes. The p...

Embodiment 2

[0041] A method for preparing a high-purity ruthenium target EBSD sample, the specific steps of the preparation method are:

[0042]Step 1: cutting the high-purity ruthenium target wire obtained by hot-pressing sintering into a sample to be tested, and the size of the sample is 1cm×1cm×1cm.

[0043] Step 2. Mechanically polish the sample to be tested as described in step 1, and polish the sample on water sandpaper of 150 mesh, 500 mesh, 800 mesh, 1500 mesh, and 2000 mesh in turn, and each sandpaper is ground to the sample Rinse the sample with clean water when the scratches on the surface are uniform and in one direction, rotate the sample 90°, change to a sandpaper for fine grinding, and finally rinse with clean water.

[0044] Step 3. Put the rinsed sample on a polishing machine equipped with a polishing cloth, add W2.5 and W1.0 polishing pastes in sequence, and polish until the last scratch disappears. The total polishing time is 3.5 minutes. The polished sample was rinsed...

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Abstract

The invention relates to a method for preparing high-purity ruthenium target EBSD samples, and belongs to the technical field of EBSD sample preparation. The method comprises the following steps of: cutting a high-purity ruthenium target line into to-be-tested samples, carrying out mechanical grinding and polishing on the to-be-tested samples, cleaning the to-be-tested samples, polishing the to-be-tested samples with a silicon dioxide suspension for 20-30 minutes at a gradually reduced polishing speed, and polishing the samples with clear water for 20-30 seconds at last; and cleaning the surfaces of the samples by using a neutral detergent, washing the surfaces of the samples under a faucet until the surfaces of the samples are fully cleaned, and finally drying the samples by cold air of ablower. The method is easy and convenient in operation, the surface mechanical stress of the high-purity ruthenium target can be removed, meanwhile, pollution and structure change are not brought tothe surface of the samples, and the real high-quality test sample is obtained.

Description

technical field [0001] The invention relates to a method for preparing an EBSD sample, in particular to a method for preparing a high-purity ruthenium target EBSD sample, and belongs to the technical field of EBSD sample preparation. Background technique [0002] The high-purity ruthenium target is mainly used in integrated circuit sputtering target, and is one of the important materials in the multilayer film structure of perpendicular magnetic recording. The ruthenium sputtering film is mainly used as the middle film layer to reduce the lattice loss between the upper and lower layers. Distribution profit, increase stability and reduce noise. As a sputtering target, the quality of the target directly affects the quality and yield of the film, and the microstructure, uniformity, grain size and orientation distribution of the target have a great impact on the performance of the sputtering target. Within a certain grain size range, the more consistent the grain orientation is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N1/28G01N1/32
CPCG01N1/286G01N1/32G01N2001/2866
Inventor 左玉婷王书明张丽民李聪杜凤贞张智慧张恒磊
Owner GUOBIAO BEIJING TESTING & CERTIFICATION CO LTD
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