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Bi4V2O11/g-C3N4 heterojunction photocatalyst and preparation method and application thereof

A bi4v2o11, 1.bi4v2o11 technology, applied in the field of Bi4V2O11/g-C3N4 heterojunction photocatalyst and its preparation, can solve the problems of low photocatalytic activity, narrow photoresponse range and high electron-hole recombination rate

Inactive Publication Date: 2020-10-27
上海毅帆环保科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The first object of the present invention is to provide a Bi 4 V 2 o 11 / g -C 3 N 4 Heterojunction photocatalysts can solve the technical problems of narrow photoresponse range, high electron-hole recombination rate and low photocatalytic activity in the photocatalytic process

Method used

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  • Bi4V2O11/g-C3N4 heterojunction photocatalyst and preparation method and application thereof
  • Bi4V2O11/g-C3N4 heterojunction photocatalyst and preparation method and application thereof
  • Bi4V2O11/g-C3N4 heterojunction photocatalyst and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Embodiment 1, preparation g-C 3 N 4 Powder

[0041] g-C 3 N 4 Powder 1: Weigh 25g of urea into a glass mortar, grind for 2 hours, control the grinding rate to 30-40r / min; then transfer to an alumina crucible, wrap it with aluminum foil and seal it at a rate of 16°C / min Heating to 400°C, then holding for 2 hours; then using the same heating rate to raise to 550°C, and then holding for 2 hours; finally cooling the crucible to room temperature naturally, the obtained light yellow powder is g-C 3 N 4 Powder. The g-C 3 N 4 The powder is in the shape of curly flakes.

[0042] g-C 3 N 4 Powder 2: main preparation steps and g-C 3 N 4 Powder 1 is the same, the difference is: grinding for 4 hours.

[0043] g-C 3 N 4 Powder 3: main preparation steps and g-C 3 N 4 Powder 1 is the same, the difference is: no grinding.

[0044] g-C 3 N 4 Powder 4: Use melamine as raw material, heat to 520°C at a rate of 10°C / min, and keep warm for 4 hours.

Embodiment 2、1

[0045] Example 2, 10% Bi 4 V 2 o 11 Doped Bi 4 V 2 o 11 / g-C 3 N 4 heterojunction photocatalyst

[0046] Bi 4 V 2 o 11 / g -C 3 N 4 The preparation of the heterojunction photocatalyst includes the following steps:

[0047] (1), weighing 0.5g g-C 3 N 4 Powder 1, add it to 60mL ethylene glycol, and ultrasonic treatment for 30 minutes, the ultrasonic power is 1800W, to obtain nanosheet g-C 3 N 4 The solution.

[0048] (2), add 0.095g of Bi(NO in the above-mentioned solution of step (1) subsequently 3 ) 3 ·5H 2 O and 0.012 g of NH 4 VO 3 , stirred vigorously for 30 minutes to obtain a homogeneous solution at a stirring rate of 500 r / min.

[0049] (3), transfer the homogeneous solution of step (2) into a polytetrafluoroethylene-lined autoclave, control the heat treatment at 180°C for 8 hours, then wash the resulting product 3 times with deionized water, and then wash 3 times with ethanol , and dried at 70°C for 20h to finally obtain 10% Bi 4 V 2 o 11 Doped ...

Embodiment 3

[0051] Example 3, 20% Bi 4 V 2 o 11 Doped Bi 4 V 2 o 11 / g-C 3 N 4 heterojunction photocatalyst

[0052] The basic steps of embodiment 3 are the same as embodiment 2, the difference is:

[0053] In step (2), add 0.19g of Bi(NO 3 ) 3 ·5H 2 O and 0.024 g NH 4 VO 3 .

[0054] In step (3), heat treatment at 180° C. for 12 hours.

[0055] Get 20% Bi at the end 4 V 2 o 11 Doped Bi 4 V 2 o 11 / g -C 3 N 4 Heterojunction Photocatalyst B.

[0056] against Bi 4 V 2 o 11 / g -C 3 N 4 Heterojunction photocatalyst B is detected by XRD, the results are as follows figure 1 shown. Depend on figure 1 It can be seen that the Bi prepared in Example 3 4 V 2 o 11 / g -C 3 N 4 Heterojunction photocatalyst B includes Bi 4 V 2 o 11 and g-C 3 N 4 .

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Abstract

The invention discloses a Bi4V2O11 / g-C3N4 heterojunction photocatalyst and a preparation method and application thereof. The Bi4V2O11 / g-C3N4 heterojunction photocatalyst comprises Bi4V2O11 and g-C3N4,and the Bi4V2O11 accounts for 0.01-50% of the total weight of the Bi4V2O11 / g-C3N4 heterojunction photocatalyst. The preparation method of the catalyst comprises the following steps: dissolving a formula amount of g-C3N4 powder with ethylene glycol to obtain a g-C3N4 solution; then adding bismuth nitrate and ammonium vanadate, and stirring to obtain a uniform solution; transferring the solution into an autoclave for heat treatment to obtain a product, and washing and drying the product to obtain the Bi4V2O11 / g-C3N4 heterojunction photocatalyst. Bi4V2O11 accounts for 0.01%-50% of the total weight of the catalyst, wherein the molar ratio of the bismuth element to the vanadium element is 1.5-2.5: 1. The photocatalyst has excellent photocatalytic activity, excellent CO2 catalytic reduction performance and long catalytic life. The process is simple, and cost is low.

Description

technical field [0001] The invention belongs to g-C 3 N 4 The field of photocatalyst technology. Concretely involving a Bi 4 V 2 o 11 / g -C 3 N 4 Heterojunction photocatalyst and its preparation method and application. Background technique [0002] g-C 3 N 4 It is a semiconductor material that can be used as a photocatalyst for the photodegradation of organic pollutants. g-C 3 N 4 The synthetic methods of the compound mainly include thermocondensation polymerization synthesis method, solvothermal synthesis method, electrochemical deposition method and solid-phase synthesis method. Among them, the thermal condensation polymerization synthesis method is mainly obtained by direct thermal condensation polymerization of urea, melamine, etc. at 400-600 ° C as raw materials. However, g-C obtained by direct thermal condensation polymerization using urea as a raw material by thermal condensation polymerization synthesis method 3 N 4 There are problems such as small spe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/24B01J35/10B01J37/10C01B32/40B01D53/86B01D53/62
CPCB01J27/24B01J37/10C01B32/40B01D53/8671B01D2258/06B01J35/61B01J35/39
Inventor 彭皓郭瑞堂蔡明星
Owner 上海毅帆环保科技有限公司
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