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Perovskite battery and preparation method thereof

A perovskite cell, perovskite technology, applied in the field of solar cells, can solve the problems of large optics, thin film optics, narrow band gap, loss, etc.

Inactive Publication Date: 2020-10-23
北京宏泰创新科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the embodiments of the present invention is to provide a perovskite battery and a preparation method thereof, which are used to solve the problems caused by SnO in the prior art. 2 The lower conduction band bottom position of the film, resulting in electrons and holes in the perovskite and SnO 2 Larger recombination at the interface, and SnO 2 The optical band gap of the thin film is narrow, and the electron transport layer as the light-absorbing surface will cause a large optical loss problem

Method used

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  • Perovskite battery and preparation method thereof
  • Perovskite battery and preparation method thereof
  • Perovskite battery and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0065] Select glass substrate as the substrate;

[0066] Depositing an ITO transparent conductive film layer with a thickness of 200nm on the substrate;

[0067] Deposit Be-containing SnO with a thickness of 50nm on the ITO transparent conductive film layer 2 thin film layer, where SnO 2 : Be molar ratio is 1:0.05;

[0068] In Be-containing SnO 2 Spin-coat FAPbI with a thickness of 500 nm on the thin film layer 3 film layer;

[0069] In FAPbI 3 The Spiro-OMeTAD film layer with a thickness of 100nm is spin-coated on the film layer;

[0070] On the Spiro-OMeTAD thin film layer, gold with a thickness of 80nm was vapor-deposited as an electrode.

Embodiment 2

[0072] Select glass substrate as the substrate;

[0073] Depositing an ITO transparent conductive film layer with a thickness of 200nm on the substrate;

[0074] Deposit Be-containing SnO with a thickness of 50nm on the ITO transparent conductive film layer 2 thin film layer, where SnO 2 : Be molar ratio is 1:0.09;

[0075] In Be-containing SnO 2 Spin-coat FAPbI with a thickness of 500 nm on the thin film layer 3 film layer;

[0076] In FAPbI 3 The Spiro-OMeTAD film layer with a thickness of 100nm is spin-coated on the film layer;

[0077] On the Spiro-OMeTAD thin film layer, gold with a thickness of 80nm was vapor-deposited as an electrode.

Embodiment 3

[0079] Select glass substrate as the substrate;

[0080] Depositing an ITO transparent conductive film layer with a thickness of 200nm on the substrate;

[0081] Deposit Be-containing SnO with a thickness of 50nm on the ITO transparent conductive film layer 2 thin film layer, where SnO 2 : Be molar ratio is 1:0.01;

[0082] In Be-containing SnO 2 Spin-coat FAPbI with a thickness of 500 nm on the thin film layer 3 film layer;

[0083] In FAPbI 3 The Spiro-OMeTAD film layer with a thickness of 100nm is spin-coated on the film layer;

[0084] On the Spiro-OMeTAD thin film layer, gold with a thickness of 80nm was vapor-deposited as an electrode.

[0085] For the perovskite cell that comparative example, embodiment 1, embodiment 2 and embodiment 3 make are tested, adopt the steady-state light source IV tester to measure the current density of battery (mA / cm 2 ), voltage (V), fill factor and Eff (photoelectric conversion efficiency) to obtain the test results shown in Table ...

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Abstract

The invention provides a perovskite battery and a preparation method thereof. The perovskite battery comprises an electron transport layer containing doped Be, wherein the material of the electron transport layer comprises SnO2, and the optical band gap of the electron transport layer of the perovskite cell is improved, the optical loss is reduced, the density of photons entering the perovskite absorption layer is increased, the carrier density is increased, and the short-circuit current density of the cell is increased by doping the Be element in SnO2. The SnO2 film has a lower conduction band bottom position; electrons and holes are greatly compounded at the interface of perovskite and SnO2; after SnO2 is doped with a Be element, the optical band gap range of the SnO2 film electron transport layer can be improved, and the conduction band bottom position can be improved so that recombination of electrons and holes at the interface of the perovskite absorption layer and the SnO2 film electron transport layer can be reduced, the cell filling factor can be increased and the photoelectric conversion efficiency of the perovskite solar cell can be enhanced.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a perovskite cell and a preparation method thereof. Background technique [0002] Perovskite solar cells are considered to be the most promising next-generation photovoltaic cells due to their many advantages such as simple preparation, low investment cost, and high efficiency. At present, the conversion efficiency of perovskite solar cells studied by some laboratories has reached 23.7%, but there is still a big gap with the theoretical conversion efficiency of perovskite solar cells. There are many ways to improve the conversion efficiency of perovskite solar cells. One is to adjust the material composition of each layer of perovskite cells, and develop materials with better performance to replace the existing materials of each layer of perovskite cells; the other is to optimize perovskite cells. The interface between the layers of the mine battery is used to reduce the rec...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K30/15H10K2102/00Y02E10/549
Inventor 郑力家唐泽国张倩
Owner 北京宏泰创新科技有限公司
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