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a kind of vo 2 Alloy semiconductor thin film, preparation method and application

A semiconductor and thin film technology, applied in the field of semiconductor optoelectronic materials, can solve the problems of low visible light transmittance, high phase transition temperature, etc., and achieve the effect of increasing visible light transmittance, reducing phase transition temperature, and increasing optical bandgap

Active Publication Date: 2022-03-15
HUBEI UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of this, the present invention proposes a kind of alloy semiconductor thin film and its preparation method and application, to solve existing VO 2 Thin film has low visible light transmittance and high phase transition temperature

Method used

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  • a kind of vo <sub>2</sub> Alloy semiconductor thin film, preparation method and application
  • a kind of vo <sub>2</sub> Alloy semiconductor thin film, preparation method and application
  • a kind of vo <sub>2</sub> Alloy semiconductor thin film, preparation method and application

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Embodiment 1

[0045] The invention provides an alloy semiconductor thin film, the chemical formula of the thin film is Hf 0.12 W 0.02 V 0.86 o 2 .

[0046] It should be noted that the present invention uses W 6+ Ion doping to effectively reduce VO 2 Phase transition temperature, Hf 4+ Ion doping to increase VO 2 The optical bandgap of the film, so that Hf x W y V 1-x-y o 2 Alloy semiconductor films have high visible light transmittance and a phase transition temperature close to room temperature. Specifically, the present invention utilizes HfO 2 The bandgap (5.5eV) is larger than VO 2 bandgap (2.6eV), using Hf 4+ Ionic partial replacement of V 4+ ions, to increase VO 2 The optical bandgap effectively increases the visible light transmittance of the film. At the same time, W ion is +6 valence, in VO 2 W 6+ The ions are equivalent to the introduction of carriers. The more carriers are introduced, the easier it is to drive the electronic phase transition, so the phase transi...

Embodiment 2

[0060] The invention provides an alloy semiconductor thin film, the chemical formula of the thin film is Hf 0.11 W 0.03 V 0.86 o 2 .

[0061] Based on the same inventive concept, the embodiment of the present application also provides a method for preparing the alloy semiconductor thin film, including the following steps:

[0062] S11. Provide a substrate;

[0063] S12. Prepare a thin film on the surface of the substrate by pulse laser ablation, magnetron sputtering or electron beam evaporation.

[0064] It should be noted that, in the implementation of this application, the substrates include c-plane sapphire substrates or glass substrates, silicon or quartz glass substrates, GaN / sapphire (silicon) substrates, etc.; sapphire substrates, whose main component is aluminum oxide (Al 2 o 3 ), c-Al 2 o 3 Indicates c-plane sapphire; in the implementation of this application, the thickness of the c-plane sapphire substrate is 0.35-0.45mm;

[0065] Specifically, in the embod...

Embodiment 3

[0074] The invention provides an alloy semiconductor thin film, the chemical formula of the thin film is Hf 0.10 W 0.04 V 0.86 o 2 .

[0075] Based on the same inventive concept, the embodiment of the present application also provides a method for preparing the alloy semiconductor thin film, including the following steps:

[0076] S11. Provide a substrate;

[0077] S12. Prepare a thin film on the surface of the substrate by pulse laser ablation, magnetron sputtering or electron beam evaporation.

[0078] It should be noted that, in the implementation of this application, the substrates include c-plane sapphire substrates or glass substrates, silicon or quartz glass substrates, GaN / sapphire (silicon) substrates, etc.; sapphire substrates, whose main component is aluminum oxide (Al 2 o 3 ), c-Al 2 o 3 Indicates c-plane sapphire; in the implementation of this application, the thickness of the c-plane sapphire substrate is 0.35-0.45mm;

[0079] Specifically, in the embod...

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Abstract

The invention provides an alloy semiconductor thin film, a preparation method and an application, and the chemical formula of the alloy semiconductor thin film is Hf x W y V 1‑x‑y o 2 , wherein, 0<x<1, 0<y<1, the alloy semiconductor thin film of the present invention utilizes HfO 2 The bandgap (5.5eV) is larger than VO 2 bandgap (2.6eV), using Hf 4+ Ionic partial replacement of V 4+ ions, to increase VO 2 The optical band gap effectively improves the visible light transmittance of the film. At the same time, W ion is +6 valence, in VO 2 W 6+ The ions are equivalent to the introduction of carriers. The more carriers are introduced, the easier it is to drive the electronic phase transition, so the phase transition temperature is reduced. Select Hf 4+ ions and W 6+ Ionic partial replacement of V 4+ ions produced Hf x W y V 1‑x‑y o 2 Alloy system to achieve VO 2 High visible light transmittance and adjustment of its phase transition temperature.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic materials, in particular to an alloy semiconductor thin film and its preparation method and application. Background technique [0002] With the development of the economy, the trend of global energy shortage is becoming more and more obvious. Human beings are facing a series of problems such as increasing global energy demand, increasing depletion of fossil fuels and increasing environmental pollution, which makes people realize that the use of environmentally friendly smart materials is particularly important for energy conservation. And solar energy is an inexhaustible renewable energy source, and it is also a green energy source. If solar energy can be fully utilized, it can be predicted that it will play a great role in solving human energy and environmental problems. Every summer, using air conditioners to cool down indoors will consume a lot of electric energy. Ordinar...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/30C23C14/08
CPCC23C14/35C23C14/30C23C14/083
Inventor 何云斌王歆茹李派陆浩黎明锴李昊陈剑卢寅梅常钢
Owner HUBEI UNIV
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