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Preparation method of low-sunlight amorphous silicon thin-film solar cell window layer

A technology of amorphous silicon thin film and solar cell, applied in the field of solar photovoltaic utilization, can solve the problem of low power generation efficiency in low-sunshine areas

Inactive Publication Date: 2019-10-08
GUIZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The core of photovoltaic utilization is solar cells. The current commercial solar cells are mainly crystalline silicon solar cells. Crystalline silicon cells have higher power generation efficiency in areas with sufficient sunlight, but the power generation efficiency is not high in low-sunlight areas.

Method used

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  • Preparation method of low-sunlight amorphous silicon thin-film solar cell window layer

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Experimental program
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Effect test

Embodiment 1

[0017] Example 1. A method for preparing a window layer of a low-insolation amorphous silicon thin-film solar cell is carried out according to the following steps:

[0018] a. Clean the surface of the conductive glass substrate and dry it;

[0019] b. Using silane, hydrogen, methane / ethane, and borane as raw material gases, deposit a P-type amorphous silicon film layer containing carbon and hydrogen on the surface of a conductive glass substrate to obtain B-containing P-type SiCx:Hy amorphous silicon The thin film battery window layer, wherein, x=1, y=1 or 2 or 3.

[0020] Specifically, in the aforementioned step b, during deposition, a B-doped SiCx:Hy amorphous silicon thin film is deposited on the surface of the conductive glass substrate by using a plasma enhanced chemical vapor deposition method.

[0021] Specifically, in the aforementioned step b, during deposition, the temperature of the conductive glass substrate is 250°C.

[0022] Specifically, in the aforementioned...

Embodiment 2

[0026] Example 2. A method for preparing a window layer of a low-insolation amorphous silicon thin-film solar cell is carried out according to the following steps:

[0027] a. Clean the surface of the conductive glass substrate and dry it;

[0028] b. Using silane, hydrogen, methane / ethane, and borane as raw material gases, deposit a P-type amorphous silicon film layer containing carbon and hydrogen on the surface of a conductive glass substrate to obtain B-containing P-type SiCx:Hy amorphous silicon The thin film battery window layer, wherein, x=1, y=1 or 2 or 3.

[0029] Specifically, in the aforementioned step b, during deposition, a B-doped SiCx:Hy amorphous silicon thin film is deposited on the surface of the conductive glass substrate by using a plasma enhanced chemical vapor deposition method.

[0030] Specifically, in the aforementioned step b, during deposition, the temperature of the conductive glass substrate is 150°C.

[0031] Specifically, in the aforementioned...

Embodiment 3

[0035] Example 3. A method for preparing a window layer of a low-insolation amorphous silicon thin-film solar cell is carried out according to the following steps:

[0036] a. Clean the surface of the conductive glass substrate and dry it;

[0037] b. Using silane, hydrogen, methane / ethane, and borane as raw material gases, deposit a P-type amorphous silicon film layer containing carbon and hydrogen on the surface of a conductive glass substrate to obtain B-containing P-type SiCx:Hy amorphous silicon The thin film battery window layer, wherein, x=1, y=1 or 2 or 3.

[0038] Specifically, in the aforementioned step b, during deposition, a B-doped SiCx:Hy amorphous silicon thin film is deposited on the surface of the conductive glass substrate by using a plasma enhanced chemical vapor deposition method.

[0039] Specifically, in the aforementioned step b, during deposition, the temperature of the conductive glass substrate is 150-350°C.

[0040] Specifically, in the aforementi...

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Abstract

The invention discloses a preparation method of a low-sunlight amorphous silicon thin-film solar cell window layer, which comprises the steps of a, cleaning the surface of a conductive glass substrateand drying; b, taking silane, hydrogen, methane / ethane and borane as raw material gases, and depositing a P-type amorphous silicon thin-film layer containing carbon and hydrogen on the surface of the conductive glass substrate to obtain a B-containing P-type SiCx:Hy amorphous silicon thin-film cell window layer, wherein x is equal to 1, and y is equal to 1 or 2 or 3. The preparation method has the characteristic of improving the solar power generation efficiency.

Description

technical field [0001] The invention relates to the technical field of solar photovoltaic utilization, in particular to a method for preparing a window layer of a low-insolation amorphous silicon thin-film solar cell. Background technique [0002] Because of its non-pollution, sustainability and wide distribution, solar energy has become an energy source that countries all over the world are competing to develop and utilize. Photovoltaic power generation is one of the most important ways to utilize solar energy. The core of photovoltaic utilization is solar cells. The current commercial solar cells are mainly crystalline silicon solar cells. Crystalline silicon cells have higher power generation efficiency in areas with sufficient sunlight, but the power generation efficiency is not high in areas with low sunlight. Contents of the invention [0003] The object of the present invention is to provide a method for preparing a window layer of a low-insolation amorphous silico...

Claims

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Application Information

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IPC IPC(8): H01L31/20H01L31/0445H01L31/075H01L31/028
CPCH01L31/028H01L31/0445H01L31/075H01L31/202Y02E10/547Y02E10/548Y02P70/50
Inventor 麦毅吴复忠谷肄静李水娥戴新义
Owner GUIZHOU UNIV
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