Annealing method of oxide semiconductor film by utilizing deep ultraviolet laser

Abstract

The invention belongs to the field of deep ultraviolet laser annealing, and discloses an annealing method of an oxide semiconductor film by utilizing deep ultraviolet laser. The method comprises the following steps of preparing an amorphous oxide semiconductor film on a glass substrate, horizontally placing the film on a sample stage, setting a minimum distance between a laser device lens and a film sample, setting a movement speed of a laser beam, setting a transverse overlapping rate and a longitudinal spacing of beam movement, and then performing transverse continuous scanning by the laserbeam till all areas are effected. According to the method, continuous scanning is performed on the film by the deep ultraviolet laser, so that the surface topography, the physical property and the optical characteristic of the film are improved; the luminous transmittance is improved; and an optical band gap of STO by laser treatment is increased. Compared with the traditional high-temperature heat treatment, the method has the advantages of high energy, optional treatment range, short time, low energy consumption and the like; and the time for effecting a complete 10*10mm sample is only 1.98s.

Description

technical field [0001] The invention belongs to the field of deep ultraviolet laser annealing, in particular to a method for annealing an oxide semiconductor thin film by using a deep ultraviolet laser. Background technique [0002] The performance of the amorphous STO thin film prepared by magnetron sputtering is generally poor, and it needs to be annealed to improve the performance of the thin film. [0003] Currently common annealing techniques are (1) vacuum annealing method; (2) heat pipe test annealing furnace method; (3) contact type high current annealing furnace method; (4) induction annealing furnace method. These traditional annealing methods all have problems such as high power consumption, long annealing time, and easy damage to the substrate. [0004] Therefore, the traditional high-temperature thermal annealing can no longer meet the large-size and low-temperature processing (<350°C) requirements of today's flexible display devices. Since Soviet scholars ...

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Problems solved by technology

These traditional annealing methods have problems such as high power consumption, long annealing time, and easy damage to the substrate.

[0004] Therefore, the traditional high-temperature thermal annealing can no longer meet the large-size and low-temperature processing (<350°C) requirements of today's flexible display devices.

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