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Preparation method of composite PZT piezoelectric film based on sol-gel method and electrojet deposition method

A technology of piezoelectric film and electric jet, which is applied in the coupling of optical waveguide, the process for producing decorative surface effects, piezoelectric/electrostrictive/magnetostrictive devices, etc., can solve the problem of poor combination with electrodes and surface Large roughness and other problems, to achieve the effect of promoting preferred orientation, reducing surface roughness, and good bonding conditions

Active Publication Date: 2020-09-29
DALIAN UNIV OF TECH
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Problems solved by technology

[0006] The present invention aims at the limitation of the film thickness of the PZT piezoelectric film prepared by the sol-gel method and the limitations of the large surface roughness of the PZT piezoelectric film prepared by the electro-jet deposition method, the poor combination with the electrode and the existence of internal micropore defects, and proposes A new composite PZT piezoelectric film, using the combination of sol-gel method and electro-jet deposition method, the thickness of the prepared PZT piezoelectric film can reach several to hundreds of microns. Piezoelectric film with better microstructure, better electrode bonding conditions and higher film performance

Method used

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  • Preparation method of composite PZT piezoelectric film based on sol-gel method and electrojet deposition method
  • Preparation method of composite PZT piezoelectric film based on sol-gel method and electrojet deposition method

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specific Embodiment approach

[0030] like figure 2 As shown, the composite PZT piezoelectric film based on the sol-gel method and the electrojet deposition method, the specific steps of its preparation are as follows:

[0031] Step 1: Prepare a substrate, which is an n-type (100) single-sided polished single-crystal silicon wafer with a thickness of 250 μm, and is ready for use after cleaning. figure 1 Structure 1.

[0032] Step 2, substrate oxidation, dry oxygen oxidation of SiO with a thickness of 600nm 2 Insulation. figure 1 Structure 2.

[0033] Step 3, sputtering the bottom electrode, magnetron sputtering Ti (50nm) / Pt (200nm) metal electrode layer. figure 1 Structure 3 and Structure 4.

[0034] Step 4, prepare the bottom layer PZT by sol-gel method, configure PZT sol, spin coating (low speed 600r / min, coating time 9s, high speed 3000r / min, coating time 30s), dry pyrolysis (at 180°C Under the condition of heating for 5 minutes, then heating at 350°C for 5 minutes) and double-layer annealing and ...

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Abstract

The invention belongs to the technical field of micro electro mechanical systems and provides a preparation method of a composite PZT piezoelectric film based on a sol-gel method and an electrojet deposition method. The thickness of the prepared composite PZT piezoelectric film can reach several to hundreds of microns, and compared with a PZT piezoelectric film prepared through a traditional single electrojet deposition method, the composite PZT piezoelectric film is advantaged in that micropore defects are reduced, the crystal preferred orientation degree is improved, the combination condition of the composite PZT piezoelectric film and upper and lower electrodes is good, and the piezoelectricity, ferroelectricity and other properties are obviously improved.

Description

technical field [0001] The invention belongs to the technical field of microelectromechanical systems (MEMS), and in particular relates to the preparation of PZT piezoelectric thin films by sol-gel method and the preparation of PZT piezoelectric thick films by electrojet deposition, and the composite PZT piezoelectric film prepared by combining the advantages of the two methods . Background technique [0002] The development of microelectromechanical systems (MEMS) technology has brought great opportunities for the research of microsensors and microactuators based on PZT piezoelectric film materials. As an important functional film material, PZT piezoelectric film has been paid more and more attention by researchers in the development and application of MEMS devices because of its excellent ferroelectric, dielectric and piezoelectric properties. [0003] The sol-gel method (Sol-gel) is to dissolve the ester compound or metal alkoxide in an organic solvent to form a uniform ...

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Application Information

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IPC IPC(8): H01L41/314H01L41/318C23C18/12B81B7/04B81C1/00
CPCC23C18/1254C23C18/1216C23C18/1258C23C18/1295B81B7/04B81C1/00158H10N30/074H10N30/078
Inventor 崔岩李嘉豪于舜尧王大志高志东
Owner DALIAN UNIV OF TECH
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