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Method for preparing stable CsPbI2Br inorganic perovskite thin film based on high-flux gas phase co-evaporation

A high-throughput, inorganic calcium technology, applied in the direction of electrical components, vacuum evaporation plating, coating, etc., can solve the problems of irreversible degradation of perovskite, to facilitate photocurrent transmission, improve device efficiency, and improve photoelectric conversion efficiency effect

Active Publication Date: 2022-07-01
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Abstract
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Problems solved by technology

However, due to the presence of a certain amount of organic components in the mixed foreign components, it is easy to cause irreversible degradation of perovskite in high temperature environment.

Method used

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  • Method for preparing stable CsPbI2Br inorganic perovskite thin film based on high-flux gas phase co-evaporation
  • Method for preparing stable CsPbI2Br inorganic perovskite thin film based on high-flux gas phase co-evaporation
  • Method for preparing stable CsPbI2Br inorganic perovskite thin film based on high-flux gas phase co-evaporation

Examples

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Embodiment 1

[0034] This example provides the preparation of stable CsPbI based on high-throughput gas-phase co-evaporation 2 methods for Br inorganic perovskite thin films, such as figure 1 shown, including the following steps:

[0035] Step 1. Select 2×2cm transparent electronic grade glass as the substrate, first use deionized water to rinse the substrate several times, and then use deionized water, acetone, and ethanol as the solvent to perform ultrasonic treatment on the rinsed substrate in turn. 10 minutes; the ultrasonically treated substrate is blown dry with nitrogen gas, and then treated with oxygen plasma to enhance the bonding force and adhesion on the surface of the substrate material;

[0036] Step 2. Arrange 4×5 substrates processed in step 1 closely in the middle of the sample holder of the evaporation chamber in a rectangular array, and the size of the sample holder is 14×12 cm; put the evaporation source cesium bromide (see figure 1 the left evaporation source) and lead i...

Embodiment 2

[0045] This embodiment provides a stable CsPbI-based 2 Br inorganic perovskite thin films for perovskite solar cells, such as Figure 5 As shown, including transparent conductive glass (that is, glass substrate with transparent conductive electrodes attached), electron transport layer, stabilized CsPbI arranged in sequence from bottom to top 2 Br inorganic perovskite thin films, hole transport layers and metal electrodes.

[0046] Among them, the electron transport layer is TiO 2 Dense layer, 40 nm thick; stabilized CsPbI 2 The thickness of the Br perovskite thin film is 400 nm; the hole transport layer is a Spiro-OMeTAD layer with a thickness of 150 nm; the metal electrode is a gold electrode with a thickness of 100 nm.

[0047] The above is based on stable CsPbI 2 The preparation method of the perovskite solar cell of the Br inorganic perovskite thin film includes the following steps:

[0048] Step 1. Select 2 × 2cm transparent conductive glass as the substrate, first u...

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Abstract

The invention provides a method for preparing a stable CsPbI2Br inorganic perovskite thin film based on high-flux gas phase co-evaporation, and belongs to the technical field of perovskite material preparation. Cesium bromide and lead iodide are adopted as evaporation sources, the position of a substrate is kept fixed in the deposition process, and the stable CsPbI2Br inorganic perovskite thin film is prepared. The CsPbI2Br inorganic perovskite thin film with high phase stability is obtained, wherein the content of cesium bromide and the content of lead iodide change in a gradient mode in the direction of the positions of the two evaporation sources. Preferably, the substrate is arranged at a specific position, the stable CsPbI2Br inorganic perovskite thin film with a zero-dimensional Cs4PbI6-xBrx'molecular lock 'structure distributed at the crystal boundary of the three-dimensional CsPbI2Br perovskite can be obtained, preferred orientation of the crystal face of the inorganic CsPbI2Br perovskite (100) can be promoted, light current transmission is facilitated, and the photoelectric conversion efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of preparation of perovskite materials, in particular to the preparation of stable CsPbI based on high-flux gas-phase co-evaporation 2 Methods for Br inorganic perovskite thin films. Background technique [0002] The semiconductor photovoltaic effect refers to the effect of light irradiating a semiconductor to generate electromotive force. According to the position of the photoelectromotive force, it is mainly divided into two categories: one occurs in the semiconductor body, and the other occurs in the semiconductor interface. The latter is often referred to as the "photovoltaic effect". Well-known physicists William Shockley and Hans Queisser proposed a theoretical limit of 30% (original calculated value) for the efficiency of semiconductor photovoltaic cells based on a careful balance analysis of photovoltaic physical processes. At present, the photoelectric conversion record efficiency of monocrystall...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/24C23C14/58H01L31/0445H01L31/18
CPCC23C14/0694C23C14/24C23C14/5806H01L31/0445H01L31/18
Inventor 刘明侦张敬敏弓爵曾鹏
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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