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Hybrid phototransistor constructed by poly (3-hexylthiophene) and mercury telluride quantum dots and preparation method and application thereof

A technology of phototransistor and hexylthiophene, which is applied in the field of photoelectric detection, can solve the problems of low efficiency and achieve the effects of reduced noise level, good gate voltage tuning, and low sensitivity

Inactive Publication Date: 2020-09-08
CHINA UNIV OF GEOSCIENCES (WUHAN)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are many QD materials today that strongly absorb and emit light in the visible spectral range, while some also absorb and emit light slightly less efficiently in the near-infrared region.

Method used

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  • Hybrid phototransistor constructed by poly (3-hexylthiophene) and mercury telluride quantum dots and preparation method and application thereof
  • Hybrid phototransistor constructed by poly (3-hexylthiophene) and mercury telluride quantum dots and preparation method and application thereof
  • Hybrid phototransistor constructed by poly (3-hexylthiophene) and mercury telluride quantum dots and preparation method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0042] A hybrid phototransistor-type near-infrared photodetector constructed of poly(3-hexylthiophene) and mercury telluride quantum dots and a preparation method thereof, characterized in that it comprises the following steps:

[0043] 1. Electrolysis of telluride to obtain hydrogen telluride gas;

[0044] 2. Add 1.9g of mercuric chloride (HgCl 2 ) was dissolved in 250 mL DMF (dimethylformamide), and 75 mL DPE (1,2-bis(diphenylphosphine) ethane), 5 mL TEA (triethanolamine) and 2.4 mL FMT (O-((9H -fluoro-9-yl)methyl)S-(2-mercaptoethyl)carbonate);

[0045] 3. Add the gas obtained in 1 to the solution obtained in 2, first stir at 3°C ​​for 1 hour, then stir while raising the temperature to room temperature, and finally raise the temperature to 40°C and stir until the fluorescence wavelength of the obtained product is 2400nm;

[0046] 4. Add the solution obtained in 3 into the mixed solution of ethyl acetate and hexane, stir for 20 minutes, centrifuge to obtain a precipitate, a...

Embodiment 2

[0069] The steps in this embodiment are basically the same as in Example 1, the difference is that in step 1, the mercuric chloride added is 2.3g, DPE is 60mL, TEA is 10mL and FMT is 1.5mL; in step 3, stirring The temperature is 8°C, the time is 45min, and the fluorescence emission reaches 2600nm; in step 4, the stirring time is 40min, and the drying time is 6min; in step 5, the volume of DMSO is 40mL, and the ultrasonic time is 5min; in step 6, The volume of TCE is 10mL, the volume of DDT is 6mL and the volume of formamide is 4mL, the volume of DMSO is 50mL, and the standing time is 40min; in step 7, the drying time is 20min; in step 9, dissolve for 20min, add poly(3- Hexylthiophene) and stirred at 60°C for 6h; in step 10, the deposition rate was 1500 rpm for 20s; in step 11, 1500 rpm for 20s; in step 12, annealed at 40°C for 15min.

[0070] The prepared P3HT:HgTe QD hybrid phototransistor was tested by scanning electron microscope, transmission electron microscope, high-reso...

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Abstract

The invention discloses a hybrid phototransistor constructed by poly (3-hexylthiophene) and mercury telluride quantum dots as well as a preparation method and application thereof. According to the invention, DMF is used as a reaction solvent, so that aggregation of QDs is reduced to the greatest extent, and the QDs are kept in a good dispersion state in a solution; ligands such as DPE, TEA and FMTare used for controlling nucleation, growth, morphology, fluorescence property and stability of QDs; the low-temperature stage is a nucleation stage of QDs, small QDs are generated, then growth is started in the process of raising the temperature to the room temperature, and finally the emission band is reached in the high-temperature stage; then, the HgTe QDs are purified; ligand exchange is performed; the HgTe QDs are purified; HgTe QDs are dissolved in methylbenzene to form a solution, so that quantum dot polymerization before film deposition is inhibited; p3HT is directly added into the prepared HgTe QDs solution to prepare a P3HT: HgTe QDs solution, and a P3HT: HgTe QDs phototransistor is obtained after deposition and washing in S11 and S12. The phototransistor provided by the invention has excellent response speed, high sensitivity and low noise level at the same time.

Description

technical field [0001] The invention relates to the technical field of photodetection, in particular to a hybrid phototransistor constructed of poly(3-hexylthiophene) and mercury telluride quantum dots, and a preparation method and application thereof. Background technique [0002] Near-infrared light detection technology has a wide range of applications in telecommunications, biomedical imaging, night vision for military or civilian monitoring, gas sensing, and chemical spectral analysis. However, existing infrared detectors usually use traditional narrow-bandgap semiconductors as photosensitive materials. In order to improve detection sensitivity, shorten device response time, and reduce the influence of background noise, the normal operation of these devices requires a liquid nitrogen cooling environment, which makes the device The application occasions and working hours are greatly limited. At the same time, the classical theoretical limit of the quantum efficiency of t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/46H01L51/42
CPCH10K71/10H10K71/00H10K71/12H10K30/35H10K2102/00Y02E10/549Y02P70/50
Inventor 董轶凡袁勋龙夏帆
Owner CHINA UNIV OF GEOSCIENCES (WUHAN)
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