Inverted-structure OLED device based on strong electron injection layer and preparation method thereof
A technology of inverted structure and injection layer, which is applied in the fields of electro-solid devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of narrow manufacturing requirements, high energy consumption and high cost, and achieves improved electro-optic performance and improved working durability. properties, the effect of contributing to electron injection
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[0030] A preparation method for preparing the above-mentioned inverted structure OLED device, comprising the following steps:
[0031] (1), preparation of cesium carbonate-ethanol solution: 99.99% cesium carbonate powder is added in 99.7% ethanol solution, and continue heating at 100 ℃ until described cesium carbonate powder dissolves completely, and the obtained concentration is 2-8% cesium carbonate-ethanol solution.
[0032] (2) Preparation of zinc oxide-methanol solution: dissolving 99.5% zinc oxide nanopowder in 99.9% methanol to prepare a zinc oxide-methanol solution with a concentration of 0.2-0.4%.
[0033] (3) Preparation of mixed solution: mix zinc oxide-methanol solution and cesium carbonate-ethanol solution with a weight ratio of 1-2:2-1 to prepare the mixed solution.
[0034] (4), ITO transparent cathode processing: place the ITO coated glass sheet in an ultrasonic cleaner with an ultrasonic frequency of 40KHz and add distilled water for ultrasonication for 10-15...
Embodiment 1
[0039] Example 1: ITO / s-Cs 2 CO 3 (2%) / BPhen(30nm) / TAZ(25nm) / CBP(100nm) / MoO 3 (5nm) / Al(200nm)
[0040] The following examples are the same as Example 1 except for the data of the strong electron injection layer.
Embodiment 2
[0041] Example 2: ITO / s-Cs 2 CO 3 (5%) / BPhen / TAZ / CBP / MoO 3 / Al
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