Inverted structure OLED device based on strong electron injection layer and manufacturing method thereof
An inverted structure and injection layer technology, which is applied in the direction of electrical solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as high energy consumption, high cost, and narrow manufacturing requirements, so as to improve work durability and improve The effect of electro-optical performance and excellent electronic performance
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[0030] A preparation method for preparing the above-mentioned inverted structure OLED device, comprising the following steps:
[0031] (1), preparation of cesium carbonate-ethanol solution: 99.99% cesium carbonate powder is added in 99.7% ethanol solution, and continue heating at 100 ℃ until described cesium carbonate powder dissolves completely, and the obtained concentration is 2-8% cesium carbonate-ethanol solution.
[0032] (2) Preparation of zinc oxide-methanol solution: dissolving 99.5% zinc oxide nanopowder in 99.9% methanol to prepare a zinc oxide-methanol solution with a concentration of 0.2-0.4%.
[0033] (3) Preparation of mixed solution: mix zinc oxide-methanol solution and cesium carbonate-ethanol solution with a weight ratio of 1-2:2-1 to prepare the mixed solution.
[0034] (4), ITO transparent cathode treatment: place the ITO coated glass sheet in an ultrasonic cleaner with an ultrasonic frequency of 40KHz and add distilled water for ultrasonication for 10-15m...
Embodiment 1
[0039] Example 1: ITO / s-Cs 2 CO 3 (2%) / BPhen(30nm) / TAZ(25nm) / CBP(100nm) / MoO 3 (5nm) / Al(200nm).
[0040]The following examples are the same as Example 1 except for the data of the strong electron injection layer.
Embodiment 2
[0041] Example 2: ITO / s-Cs 2 CO 3 (5%) / BPhen / TAZ / CBP / MoO 3 / Al;
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