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ESD circuit capable of improving high-voltage reliability

A reliability and circuit technology, applied in the field of ESD circuits, can solve the problems of large chip area, high complexity, and low reliability of high-voltage resistance, etc., and achieve the goal of reducing chip area, reducing complexity, and reducing connection complexity Effect

Inactive Publication Date: 2020-08-21
上海传卓电子有限公司
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  • Claims
  • Application Information

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Problems solved by technology

[0004] For example, in the invention with the application number 201510104607.9 and the name "High Voltage ESD Protection Circuit", a stacked high voltage NMOS structure is used to realize the ESD protection circuit, such as figure 1 As shown, but the chip occupies a large area, high complexity, high-voltage reliability is not strong

Method used

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  • ESD circuit capable of improving high-voltage reliability

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Embodiment 1

[0036] refer to figure 2 , the present invention provides an ESD circuit for improving high-voltage reliability, including a DC high-voltage-resistant power supply ESD input terminal, a DC high-voltage-resistant ground input terminal, a high-voltage-resistant boost structure, a voltage dividing structure, a low-voltage protection structure, and a high-power NMOS tube .

[0037] In this embodiment, the high-voltage boosting structure is composed of a high-voltage forward-conducting high-voltage diode D1 and a high-voltage reverse-conducting high-voltage diode D2. When the breakdown voltage and the forward conduction voltage drop of the high voltage diode D1, this structure is turned on; adjust the series high voltage diode D1, this structure can increase the reverse breakdown voltage of the high voltage diode D2; the series high voltage diode D1 can also increase the reverse conduction high voltage The high-voltage reliability of the diode D2; this structure can share the N-t...

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Abstract

The invention provides an ESD circuit capable of improving high-voltage reliability, particularly relates to the technical field of electrostatic discharge protection of integrated circuits, and aimsto solve the problem of low high-voltage reliability in an existing ESD circuit. A novel high-voltage-resistant structure which is composed of a high-voltage-resistant forward conduction diode and a high-voltage-resistant reverse conduction diode is designed, and an N-type region of a PN junction can be shared in a layout. A voltage division structure and a low-voltage protection structure are adopted to protect a circuit, and a high-power NMOS transistor is utilized to discharge ESD current. The ESD circuit provided by the invention is high in DC high-voltage level resistance reliability andESD protection capability, and a chip has the advantages of low implementation complexity and small area.

Description

technical field [0001] The invention relates to the technical field of electronic circuits, in particular to an ESD circuit for improving high-voltage reliability. Background technique [0002] Two objects with different electrostatic potentials will cause the transfer of electrostatic charges between the two objects due to direct contact or electrostatic field induction. When the energy of the electrostatic electric field reaches a certain level, the phenomenon of breaking down the medium and discharging it is called electrostatic discharge (ESD). Electrostatic discharge can change the electrical characteristics of semiconductor devices, deplete or destroy their functions, and may also affect the normal operation of electronic systems, causing equipment failure or failure. [0003] With the rapid development of integrated circuit technology, while the feature size of integrated circuit products is getting smaller and the integration level is getting higher and higher, the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02H9/04
CPCH02H9/04
Inventor 张超汪坚雄胡枭
Owner 上海传卓电子有限公司
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