Preparation method of novel conductive silver adhesive with high heat conductivity coefficient and conductive silver adhesive

A technology of conductive silver glue and high thermal conductivity, which is applied in the direction of conductive adhesives, adhesives, epoxy resin glue, etc., can solve the problems of high-performance conductive fields, high void ratio, poor conductivity of conductive particles, etc., and achieve effective Reliable heat conduction network, simple operation process, complete and continuous silver layer

Active Publication Date: 2020-08-11
CHINA ELECTRONIC TECH GRP CORP NO 38 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the electroless plating process is widely used at present, but the metal-coated inorganic particles prepared by this process have defects such as uneven coating, poor compactness, high porosity, and low binding force, which makes the conductive particles after coating conductive. Poor performance, unable to meet the application in the high-performance conductive field

Method used

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  • Preparation method of novel conductive silver adhesive with high heat conductivity coefficient and conductive silver adhesive
  • Preparation method of novel conductive silver adhesive with high heat conductivity coefficient and conductive silver adhesive
  • Preparation method of novel conductive silver adhesive with high heat conductivity coefficient and conductive silver adhesive

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preparation example Construction

[0031] The preparation method of high thermal conductivity novel conductive silver glue of the present invention comprises the steps:

[0032] S1, preparing silver-coated microbeads by silver-plating on the surface of hollow heat-conducting microbeads;

[0033] S2, preparing the silver-coated microbeads as component A;

[0034] S3, preparing component B;

[0035] S4, adding the component A to the component B, vacuum defoaming and mixing to form a mixed product;

[0036] S5, vacuum filling the mixed product to obtain conductive silver glue.

[0037] Specifically, the preparation method of the silver-coated microbeads described in the step S1 is:

[0038] S11, to remove impurities, add hollow heat-conducting microbeads and deionized water to a high-speed mixer at room temperature and stir for 5min to 15min at a speed of 200r / min to 400r / min. 3 times, then dry at 150°C for 1h to 2h for use;

[0039] S12, pretreatment, the hollow heat-conducting microbeads are mixed with an a...

Embodiment 1

[0057] At room temperature the hollow Si 3 N 4 Add the microspheres and deionized water to a high-speed mixer and stir for 5 minutes at a speed of 400r / min. After stopping, pass through a 400-mesh sieve. The impurity removal process is repeated 3 times, and then dried at 150°C for 1 hour. Through alkaline washing solvent, the hollow Si 3 N 4 The microspheres were stirred in a high-speed mixer for 25 minutes at a speed of 200 r / min, and rinsed with deionized water. The pretreated hollow Si 3 N 4 The microspheres were placed on the sample holder, and the air pressure in the vacuum chamber was pumped to 10 -3 Pa level, the argon gas flow rate is 8 sccm, the sputtering power is 150W, the sputtering time is 90min, and the sample temperature is controlled at 150°C.

[0058] According to the components specified in Example 1 in Table 1, first add a hydrolysis solvent to the surface modifier hexamethylenediaminomethyltrimethoxysilane, stir evenly, and mix with the above-mentione...

Embodiment 2

[0060] Add the hollow AlN microspheres and deionized water into a high-speed mixer at room temperature and stir for 10 minutes at a speed of 300 r / min. After stopping, pass through a 400-mesh sieve, and then dry at 150°C for 1.5 hours. The hollow AlN microspheres were stirred in a high-speed mixer for 10 min with an alkali washing solvent at a speed of 400 r / min, and rinsed with deionized water. Put the pretreated hollow AlN microspheres on the sample holder, and pump the air pressure in the vacuum chamber to 10 -3 Pa level, the argon gas flow rate is 10 sccm, the sputtering power is 250W, the sputtering time is 60min, and the sample temperature is controlled at 150°C.

[0061] According to the components specified in Example 2 in Table 1, first add a hydrolysis solvent to the surface modifier γ-methacryloxypropyl trimethoxysilane, stir evenly, and mix with the above-mentioned hollow AlN after silver plating Put the microspheres together into a high-shear stirring tank, stir ...

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Abstract

The invention discloses a preparation method of a novel conductive silver adhesive with a high heat conductivity coefficient and the conductive silver adhesive. The preparation method comprises the following steps: plating silver on the surfaces of hollow heat-conducting microspheres to prepare silver-plated microbeads; preparing the silver-plated microbeads into a component A; preparing a component B; adding the component A into the component B, and performing vacuum defoaming and mixing to form a mixed product; subjecting the mixed product to vacuum filling to obtain the conductive silver adhesive. The density of conductive particles in any layer of the conductive silver adhesive of a multifunctional plate prepared by the method is close to that of a resin matrix, the problem of conductive particle sedimentation in mixing, stirring and processing use is thoroughly avoided, so that a more effective and reliable conductive network is introduced, and the batch consistency and the quality reliability are higher.

Description

technical field [0001] The invention relates to the technical field of preparation of conductive silver glue, in particular to a preparation method of a novel conductive silver glue with high thermal conductivity and the conductive silver glue. Background technique [0002] Conductive silver glue is one of the key basic materials for manufacturing microwave components. Its bonding with chips is a must-use method in current active antenna TR components. Its process is relatively simple, its operability is strong, and its electrothermal index is good. Setup and implementation, mainly used in transceiver modules (T / Rmodule), microwave multi-chip modules (microwavemulti-chipmodule) and microwave devices. In modern military warfare, radar electronic equipment is developing towards integration, miniaturization, light weight and high maneuverability. Microwave components integrated with low-power chips in the past have been difficult to meet design requirements. High-power TR chips...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09J163/02C09J9/02C09J11/04C23C14/18C23C14/35
CPCC09J163/00C09J9/02C09J11/04C23C14/185C23C14/35C08K2003/0806C08K2201/001C08K2201/005C08K9/02C08K9/06C08K7/24C08K3/08C08K7/26
Inventor 邹嘉佳张加波刘建军赵丹胡海霖张孔
Owner CHINA ELECTRONIC TECH GRP CORP NO 38 RES INST
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