Method for curing nano pattern structure under assistance of electromagnetic waves

Abstract

The invention provides a method for curing a nano pattern structure under the assistance of electromagnetic waves. The method comprises: placing a developed wafer in a deionized water solution, and replacing a developing solution with the deionized water solution; fixing the replaced wafer on a slide holder in a microwave drying chamber; rotating the slide holder, carrying out centrifugal spin-drying on the wafer, and meanwhile, starting a vacuum pump set to discharge water vapor in the chamber out of the chamber; and stopping rotating the slide holder, starting the microwave power source to completely apply microwave power into the microwave drying chamber, performing microwave drying and curing on the nano pattern structure on the wafer until moisture on the wafer is completely removed,closing the microwave power source and the vacuum pump set, and taking out the wafer. According to the method for curing the nano-pattern structures under the assistance of the electromagnetic waves,moisture on the wafer can be effectively and thoroughly removed, then the nano-pattern structures are dried and cured, and collapse of the nano-pattern structures cannot be caused in the curing process.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for electromagnetic wave-assisted solidification of a nanometer pattern structure. Background technique [0002] Modern integrated circuit technology continues to develop towards smaller feature sizes and larger wafer sizes, such as feature sizes entering 10 nanometers and wafer diameters larger than 12 inches, which poses greater challenges to the manufacturing process of microelectronic devices. Because in the manufacturing process of microelectronic devices, with the further reduction of feature size and further increase of structural complexity, the collapse of nanostructures on wafers has become an increasingly serious problem. There are many reasons for the structure to collapse, such as being subjected to external forces, the stress of the structure itself, weaker structural materials, and surface tension during the drying process. [0003] Th...

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Problems solved by technology

[0004] Traditional drying methods, such as centrifugal drying, use centrifugal force to shake water out of the wafer to achieve drying. This method is effective for macroscopic structures, but it is difficult to completely remove the attached water in nano-patterned structures.

[0005] Another example is nitrogen purge, which uses the ejected nitrogen to purge the micro-nano structure on the wafer. This method is effective for wide and shallow groove structures, but it is basically ineffective for high-aspect-ratio photoresist deep grooves, and even There is also the possibility of blowing these structures down due to excessive blowing force

[0006] In addition, there are some composite drying methods, which increase the high-temperature drying process and use baking to dry. However, due to drying or blowing, water cannot be completely removed. The surface tension of the water will inevitably cause the nano-patterns to collapse from the inside, causing the entire wafer to be scrapped and the loss is great

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