Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

LED epitaxial growth method capable of improving luminous efficiency

A technology of epitaxial growth and luminous efficiency, applied in gaseous chemical plating, coating, electrical components, etc., can solve the problems of low quantum well growth quality and low quantum well radiation recombination efficiency, so as to improve luminous efficiency and suppress lateral Growth, the effect of promoting three-dimensional growth

Active Publication Date: 2020-07-03
XIANGNENG HUALEI OPTOELECTRONICS
View PDF6 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention solves the problems of low quantum well growth quality and low quantum well radiation recombination efficiency existing in the existing LED epitaxial growth method by adopting a new multi-quantum well layer growth method, thereby improving the luminous efficiency of the LED

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • LED epitaxial growth method capable of improving luminous efficiency
  • LED epitaxial growth method capable of improving luminous efficiency
  • LED epitaxial growth method capable of improving luminous efficiency

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] This embodiment adopts the LED epitaxial growth method for improving luminous efficiency provided by the present invention, adopts MOCVD to grow GaN-based LED epitaxial wafers, and uses high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa) is used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the reaction pressure is between 70mbar and 900mbar. The specific growth method is as follows (for the epitaxial structure, please refer to figure 1 ):

[0042] An LED epitaxial growth method for improving luminous efficiency, comprising sequentially: processing a substrate 1, growing a low-temperature buffer layer GaN2, growing an undoped GaN layer 3, growing a Si-doped...

Embodiment 2

[0074] Comparative examples are provided below, that is, the growth method of the traditional LED epitaxial structure (for the epitaxial structure, please refer to figure 2 ).

[0075] Step 1: At a temperature of 1000-1100°C and a reaction chamber pressure of 100-300mbar, feed 100-130L / min of H 2 Under the conditions, process the sapphire substrate for 5-10 minutes.

[0076] Step 2: growing a low-temperature GaN buffer layer, and forming irregular small islands in the low-temperature GaN buffer layer 2 .

[0077] Specifically, the step 2 is further as follows:

[0078] At a temperature of 500-600°C and a reaction chamber pressure of 300-600mbar, 10000-20000sccm of NH is introduced 3 , 50-100sccm TMGa, 100-130L / min H 2 Under the condition of , growing the low-temperature GaN buffer layer 2 on the sapphire substrate 1, the thickness of the low-temperature GaN buffer layer 2 is 20-40nm;

[0079] At a temperature of 1000-1100°C and a reaction chamber pressure of 300-600mbar,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an LED epitaxial growth method for improving luminous efficiency. The method comprises the following steps in sequence: processing a substrate, growing a low-temperature bufferlayer GaN, growing an undoped GaN layer, growing a Si-doped N-type GaN layer, growing a multi-quantum well layer, growing an AlGaN electronic barrier layer, and growing a Mg-doped P-type GaN layer. Temperature reduction and cooling are performed. The step of growing the multi-quantum well layer sequentially comprises the substeps of growing an InGaN transition layer, growing an InGaN well layer,growing a high-temperature gradient MgN layer, growing a low-temperature gradient MgN layer, growing a linear gradient Mg-doped GaN barrier layer and carrying out Mg diffusion treatment. According tothe method, the problems of low quantum well growth quality and low quantum well radiation recombination efficiency in the existing LED epitaxial growth method are solved, so that the luminous efficiency of the LED is improved.

Description

technical field [0001] The invention belongs to the technical field of LEDs, and in particular relates to an LED epitaxial growth method for improving luminous efficiency. Background technique [0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor electronic device that converts electrical energy into light energy. When the LED has current flowing, the electrons and holes in the LED recombine in its multiple quantum wells to emit monochromatic light. As a new type of high-efficiency, environmentally friendly and green solid-state lighting source, LED has the advantages of low voltage, low energy consumption, small size, light weight, long life, high reliability and rich colors. At present, the scale of domestic production of LEDs is gradually expanding, but LEDs still have the problem of low luminous efficiency, which affects the energy-saving effect of LEDs. [0003] The quality of LED epitaxial InGaN / GaN multi-quantum wells prepared by the existin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/14H01L33/32C23C16/455C23C16/34
CPCH01L33/06H01L33/325H01L33/007H01L33/145C23C16/34C23C16/45523C23C16/455Y02P70/50
Inventor 徐平胡耀武王杰尹志哲谢鹏杰
Owner XIANGNENG HUALEI OPTOELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com