A kind of algan base diode and preparation method thereof

Abstract

The invention provides an AlGaN-based diode, which comprises an AlN layer, an active layer and a P-type layer which are epitaxially grown on a substrate in sequence, wherein the edge region of the P-type layer is etched downwards into the AlN layer to form a first mesa, and an N-type layer is epitaxially grown on the first mesa. Through the AlGaN-based diode provided by the invention, the difficulty of the device preparation can be reduced.

Description

technical field [0001] The present disclosure relates to the technical field of diodes, in particular to an AlGaN-based diode and a preparation method thereof. Background technique [0002] AlGaN-based diodes have a wide range of applications, such as AlGaN-based ultraviolet light emitting diodes (light emitting diodes, LEDs) and AlGaN-based laser diodes (laser diodes, LDs) in water and air purification, disinfection and sterilization, medical diagnosis, precision machining, non-line-of-sight communication And other fields have broad application prospects, which has aroused extensive research interest in the world. [0003] However, the structure of the traditional AlGaN-based diode is that the active layer is epitaxially grown on the N-type layer, and then the P-type layer is epitaxially grown on the active layer. This structure causes certain defects in the traditional AlGaN-based diode. For example: for AlGaN-based ultraviolet LEDs, with the shortening of the luminous wa...

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Problems solved by technology

[0004] It can be seen that the structure of the existing AlGaN-based diodes restricts high-efficiency UV LEDs and LDs. The core problem lies in the epitaxial preparation of high-quality AlGaN materials. It is difficult to grow AlGaN materials with high Al composition, resulting in the existence of sites up to 1010 square centimeters. Dislocation density, a large number of non-radiative recombination centers are generated in the active layer, which reduces the internal quantum efficiency of the device, and for the traditional AlGaN-based electrically pumped UV LD, it is necessary to epitaxially grow N-type and P-type AlGaN layers as current injection and light confinement layers

As the wavelength of LD decreases, in order to ensure sufficient optical confinement, the Al composition of the corresponding AlGaN layer is very high or the thickness is required to be large, making it difficult for AlGaN-based LDs to achieve lasing in the deep ultraviolet band

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