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Group iii nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses

A technology of light-emitting diodes and nitrides, used in semiconductor devices, electrical components, circuits, etc.

Inactive Publication Date: 2012-12-12
CREE INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While not being bound by any particular theory, it is currently believed that the drop in current may be the result of one or several factors, including hole injection saturation and / or inefficient (i.e., no light generation) at higher device currents. ) electron-hole recombination

Method used

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  • Group iii nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
  • Group iii nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
  • Group iii nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses

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Embodiment Construction

[0048] The invention will now be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. However, this invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the relative thicknesses of layers and regions may be exaggerated for clarity. Like reference numerals designate like elements throughout. It will be understood that when an element such as a layer, region, or substrate is referred to as being on or extending "on" another element, it can be directly on the other element. Either it extends directly "on" the other element or an intervening element may also be present. In contrast, when an element is referred to as being "directly on" o...

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Abstract

A Group III nitride based light emitting diode includes a p-type Group III nitride based semiconductor layer, an n-type Group III nitride based semiconductor layer that forms a P-N junction with the p-type Group III nitride based semiconductor layer, and a Group III nitride based active region on the n-type Group III nitride based semiconductor layer. The active region includes a plurality of sequentially stacked Group III nitride based wells including respective well layers. The plurality of well layers includes a first well layer having a first thickness and a second well layer having a second thickness. The second well layer is between the P-N junction and the first well layer, and the second thickness is greater than the first thickness.

Description

Technical field [0001] The present invention involves microelectronics and manufacturing methods, and more specific, the invention involves the structure that can be used in III nitride semiconductor devices such as Little Tube (LED). Background technique [0002] Lighting diode (LED) is widely used in consumer applications and business applications.The sustainable development of LED technology has brought a very efficient and stable light source that can cover visible spectra and exceed the spectrum of visible spectrum.Combined with the long -term service life of solid -state devices, these attributes have achieved a variety of new display applications, and have even led to LED use in general lighting applications to replace incandescent lamps and fluorescent lights. [0003] For example, the technical personnel in the art are well known, the light emitting diode usually includes the active area. The active area is made by the appropriate band-band material, which makes the elec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
CPCH01L33/32H01L33/06H01L33/04H01L33/007
Inventor M.J.伯格曼D.C.德里斯科尔A.查文P.肯图-阿列汉德罗J.伊贝森
Owner CREE INC
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