Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Organic film cmp slurry composition and polishing method using same

A composition and organic membrane technology, applied in chemical instruments and methods, polishing compositions containing abrasives, other chemical processes, etc., can solve problems such as difficult to use, low polishing selectivity ratio, etc.

Active Publication Date: 2020-06-19
SAMSUNG SDI CO LTD
View PDF7 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, this typical slurry composition has a low polishing selectivity ratio of SOH to TiN and is difficult to use in the RMG process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Organic film cmp slurry composition and polishing method using same
  • Organic film cmp slurry composition and polishing method using same
  • Organic film cmp slurry composition and polishing method using same

Examples

Experimental program
Comparison scheme
Effect test

preparation Embodiment 1

[0177] Preparation of organic film composition

[0178] A 2,000 ml 3-neck flask equipped with a thermometer, condenser, mechanical stirrer and dropping funnel was immersed in an oil bath at 140°C. Heating and stirring by magnets were performed on a hot plate, and the temperature of cooling water in the condenser was set to 40°C. Then, 220 g (1.0 mol) of 1-methoxypyrene and 138 g (1.0 mol) of 1,4-bismethoxymethylbenzene were added to the reactor, and then dissolved in 656 g of propylene glycol monomethyl ether acetic acid in esters. Then, 4.6 g (0.03 mol) of diethyl sulfate was added to the reactor. The temperature of the reactor was maintained at 130°C. The reaction completion point was determined by measuring the molecular weight of the reaction product at regular time intervals during the polymerization. Here, a sample for measuring molecular weight was prepared by quenching 1 g of the reaction product to room temperature, followed by diluting 0.02 g of the quenched re...

Embodiment 1 to 4 and comparative Embodiment 1 to 5

[0188] Prepare the CMP slurry composition comprising the components listed in Table 1 (wt% based on the total weight of the composition) and the balance of ultrapure water, and then will have a titanium nitride film and an organic film formed thereon The patterned wafers were polished under the following polishing conditions.

[0189] (1) Detailed information on the components of the CMP slurry composition

[0190] ①Cerium dioxide:

[0191] Colloidal ceria (SOLVAY Co., Ltd.) with an average particle diameter of 60 nm was used.

[0192] ② Cerium-containing ceria activator:

[0193] Cerium nitrate (Samchun Chemicals Co., Ltd.) was used.

[0194] ③Surface protective agent for inorganic membrane

[0195] Polyethylene glycol (PEG): Polyethylene glycol (Samchun Chemicals Co., Ltd.) having a weight average molecular weight of 200 g / mol, 1,000 g / mol or 10,000 g / mol was used.

[0196] Polyurethane (PU): Polyurethane (Sigma-Aldrich Co., Ltd.) having a weight average molecular wei...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
densityaaaaaaaaaa
densityaaaaaaaaaa
Login to View More

Abstract

Provided are an organic film CMP slurry composition comprising ceria, a cerium-containing ceria activating agent, and an inorganic film surface protecting agent, and an organic film polishing method using the same.

Description

technical field [0001] The present invention relates to a CMP slurry composition for an organic film and a polishing method using the composition. Background technique [0002] Recently, as the degree of integration and performance of semiconductor devices have improved, the line widths of interconnection patterns have become thinner, and the structure of semiconductor devices has changed to a multilayer structure. In order to improve the precision of photolithography, the interlayer planarization of each process is very important. As such a planarization technique, a CMP process is currently attracting attention, and is classified into oxide CMP, metal CMP, polysilicon CMP, and organic film CMP according to target materials. [0003] One example of a semiconductor process using organic film (C-SOH) CMP is an organic film planarization process. In the organic film planarization process, an excess portion of the organic film, such as a spin-on-hardmask (SOH) film, is polish...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C09K3/14H01L21/306
CPCC09G1/02C09K3/14H01L21/306C09K3/1409C09K3/1454H01L21/30625
Inventor 崔正敏郑荣哲金廷熙姜东宪
Owner SAMSUNG SDI CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com