Schottky diode and preparation method thereof

Abstract

The invention relates to the field of semiconductors, and particularly relates to a Schottky diode and a preparation method thereof. The method comprises the steps of extending an n-type gallium oxidelayer on a substrate; preparing a first mask layer on the n-type gallium oxide layer, wherein a window of the first mask layer is an area corresponding to a thermal oxidation treatment area to be prepared, and the thermal oxidation treatment area comprises at least one first thermal oxidation area and two second thermal oxidation areas; performing first high-temperature annealing treatment on thefront surface of the device to form a thermal oxidation treatment region; removing the first mask layer; preparing an anode metal layer on the front surface and a cathode metal layer on the back surface, the first thermal oxidation region is located below the anode metal, and each second thermal oxidation region is partially located below the anode metal. According to the method, the terminal structure can be formed through thermal oxidation, and the electric fields below the anode metal and in the edge region are reduced, so that anode reverse electric leakage is reduced, and breakdown and conduction characteristics are improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a Schottky diode and a preparation method thereof. Background technique [0002] With the application of semiconductor devices in more and more technical fields, traditional silicon-based and other narrow-bandgap semiconductor diodes have encountered many challenges. Among them, the breakdown voltage is difficult to meet the growing demand, which has become one of the key factors affecting the further improvement of device performance. one. Gallium oxide (Ga 2 o 3 ) Compared with the third-generation semiconductor materials represented by SiC and GaN, it has a wider band gap, and the breakdown field strength is equivalent to more than 20 times that of Si, and more than 2 times that of SiC and GaN. In theory, When manufacturing diode devices with the same withstand voltage, the on-resistance of the device can be reduced to 1 / 10 of SiC, 1 / 3 of GaN, GaN 2 o 3 The Baliga figure of ...

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Problems solved by technology

[0003] Wide bandgap gallium oxide Schottky diodes have the advantages of high breakdown and low on-resistance. Currently, by increasing Ga 2 o 3 The device performance of Schottky diodes has been continuously improved by methods such as crystal material quality and optimized doping process. However, the breakdown voltage and conduction characteristics of existing Schottky diodes are still far below the expected values ​​of materials.

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