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Acceleration test device and method for quantum dot photoelectric detector under vacuum and low temperature

A photoelectric detector and accelerated test technology, applied in the field of vacuum simulation, can solve the problems of cumbersome steps, long test process, labor and material resources consumption, etc., and achieve the effect of reasonable test method

Active Publication Date: 2020-05-08
LANZHOU INST OF PHYSICS CHINESE ACADEMY OF SPACE TECH
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AI Technical Summary

Problems solved by technology

Due to its characteristics, the vacuum low temperature test cannot be accelerated, and the test process is long and the steps are cumbersome, requiring a lot of manpower and material resources

Method used

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  • Acceleration test device and method for quantum dot photoelectric detector under vacuum and low temperature
  • Acceleration test device and method for quantum dot photoelectric detector under vacuum and low temperature

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Embodiment Construction

[0032] The present invention will be described in detail below with reference to the accompanying drawings and examples.

[0033] Photodetectors based on quantum dots and ligand systems will accelerate aging under the long-term action of ultraviolet rays and reduce the photoelectric conversion efficiency of the device. Therefore, the aging life test of this new type of device can be accelerated by using accelerated ultraviolet test technology. Based on the above reasons, in order to meet the life test requirements of quantum dot photodetectors in a vacuum and low temperature environment, an automatic test device and test method for accelerated aging by ultraviolet rays in a vacuum low temperature simulation device are provided, which can test the detector in space The performance of the vacuum low temperature environment is simulated.

[0034] The accelerated test device and method of a quantum dot photodetector under vacuum and low temperature of the present invention can sim...

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Abstract

According to an acceleration test device and method for a quantum dot photoelectric detector under the vacuum low temperature, the test steps are simple, the efficiency is high, and the test error islow. The test device can simulate a vacuum low-temperature environment in the space, adopts ultraviolet rays to irradiate the photoelectric device to accelerate aging, automatically carries out periodic test and records data, and can obtain performance degradation test data of the quantum dot photoelectric detector in the simulated vacuum low-temperature environment. According to the test device,an ultraviolet lamp capable of continuously working is placed in a quantum dot photoelectric detector container, so that an ultraviolet accelerated aging function can be realized; a vacuum gauge and atemperature sensor are arranged outside the quantum dot photoelectric detector container, so that the temperature and vacuum degree change of a simulation environment can be monitored in real time, and the test condition can be monitored; an integrated automatic photoelectric test module can realize the automatic test of the photoelectric performance of the photoelectric detector, and has a complete system and functions. The test method based on the device is reasonable and can be realized.

Description

technical field [0001] The invention belongs to the technical field of vacuum simulation, and in particular relates to an accelerated test device and method of a quantum dot photodetector under vacuum and low temperature. Background technique [0002] Quantum dot photodetector is a new type of photodetection device developed in the past 10 years in the 21st century. Photodetectors based on quantum dot materials have a series of advantages such as high responsivity, wide detection bandwidth, and low volume power consumption; they can also realize infrared detection at room temperature, and reduce the cooling pressure of the detector module, especially in the integration of space loads. It has great advantages under more demanding conditions; in addition, the preparation process of the device is simple and easy, the cost is low, and it is compatible with the existing microelectronics process, it is very suitable for large-scale industrial production, and it will be possible to...

Claims

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Application Information

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IPC IPC(8): G01J1/42
CPCG01J1/42Y02P70/50
Inventor 王小军龚成师杨生胜乔世英李丹明李得天
Owner LANZHOU INST OF PHYSICS CHINESE ACADEMY OF SPACE TECH
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