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Showerhead and substrate processing apparatus

一种基板处理装置、喷淋头的技术,应用在气态化学镀覆、涂层、电气元件等方向,能够解决高电阻、增加机械性破损等问题,达到容易调节、容易工序均匀度的效果

Active Publication Date: 2020-05-05
EUGENE TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Among these issues, uniformity is one of the important issues related to the evaporation process. An uneven film causes high electrical resistance (electrical resistance) on the metal wiring, increasing the possibility of mechanical damage

Method used

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  • Showerhead and substrate processing apparatus
  • Showerhead and substrate processing apparatus
  • Showerhead and substrate processing apparatus

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Embodiment Construction

[0031] Below, refer to the attached Figure 1 to Figure 8 Preferred embodiments of the present invention are described in more detail. The embodiments of the present invention can be modified into various forms, and the scope of the present invention should not be construed as being limited to the embodiments described below. This embodiment is provided in order to explain the present invention in more detail to those skilled in the art. Therefore, the shape of each element appearing in the drawings may be exaggerated in order to emphasize clearer description.

[0032] In addition, a vapor deposition apparatus will be described below as an example, but the scope of the present invention is not limited thereto, and it can be applied to various processes of processing a substrate with a reactive gas.

[0033] figure 1 is a cross-sectional view schematically showing a substrate processing apparatus according to an embodiment of the present invention. Such as figure 1 As show...

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PUM

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Abstract

According to one embodiment of the present invention, a substrate processing apparatus comprises: a chamber in which a process for a substrate is performed; a showerhead provided inside the chamber soas to spray a reaction gas toward the substrate; and a susceptor provided below the showerhead and supporting the substrate, wherein the showerhead includes: a showerhead body having an inner space,to which a reaction gas is supplied from the outside, and a plurality of spray holes communicating with the inner space so as to spray the reaction gas therein; an inflow plate provided in the inner space so as to be capable of partitioning the inner space into an inflow space and a buffer space, and having a plurality of inflow ports communicating with the inflow space and the buffer space; and aplurality of adjusting plates, which are provided in the inflow ports and can move, and can restrict the movement of the reaction gas from the inflow space to the buffer space according to the distance from the inflow plate in accordance with the movement of the adjusting plates.

Description

technical field [0001] The present invention relates to a shower head and a substrate processing device, and more particularly relates to a shower head and a substrate processing device capable of moving a plurality of regulating plates to limit the movement of reaction gas. Background technique [0002] A semiconductor device includes many layers on a silicon substrate, and these layers are vapor-deposited on the substrate through a vapor deposition process. There are several important issues with this evaporation process that are important for evaluating the deposited film and selecting the evaporation method. [0003] First, is the "quality" of the deposited film. This means composition, contamination levels, defect density, and mechanical and electrical properties. The composition of the film can change according to the vapor deposition conditions, which is very important for obtaining a specific composition. [0004] Second, is uniform thickness throughout the wafer....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67H01L21/683
CPCH01L21/67H01L21/683C23C16/45565C23C16/45563C23C16/52H01L21/67017C23C16/4583C23C16/46
Inventor 诸成泰朴灿用李在镐张吉淳尹畅焄林汉俊姜宇泳
Owner EUGENE TECH CO LTD
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