Gas conveying pipeline and semiconductor equipment

Abstract

The invention provides a gas conveying pipeline and semiconductor equipment. The gas conveying pipeline is used for conveying gas to a reaction chamber of semiconductor equipment, and comprises at least two branch pipelines and at least one 135-degree elbow, the two adjacent branch pipelines are communicated through the at least one 135-degree elbow, and the Reynolds number of the gas in the gas conveying pipeline is less than 1000. The elbow provided by the invention is a smooth arc-shaped 135-degree elbow; the sudden pressure drop (the pressure coefficient is negative) of the inner side wallwhen the mixed gas passes through the elbow in the gas conveying pipeline can be reduced; meanwhile, the Reynolds number of the reaction gas in the gas conveying pipeline is controlled to be less than 1000; the local temperature reduction caused by pressure reduction at the bent pipe is further reduced, the phenomenon that the mixed gas is condensed in the gas conveying pipeline to form liquid beads can be reduced to the maximum extent, then defects formed on the surface of a wafer due to the liquid beads are eliminated, the product yield is increased, and the production cost is reduced.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a gas delivery pipeline and semiconductor equipment. Background technique [0002] Epitaxial growth is to grow a single crystal layer on a single crystal substrate with certain requirements and the same crystal orientation as the substrate, as if the original crystal has extended outward. Epitaxial growth technology was developed in the late 1950s and early 1960s. At that time, in order to manufacture high-frequency and high-power devices, it was necessary to reduce the collector series resistance, and the material was required to withstand high voltage and high current. Therefore, it was necessary to grow a thin high-resistance epitaxial layer on a low-resistance substrate. The epitaxially grown new single crystal layer can be different from the substrate in terms of conductivity type, resistivity, etc., and can also grow multilayer single crystals with different th...

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Problems solved by technology

[0010] 2. React with oxygen molecules and water molecules in the reaction chamber to form a granular residue a on the substrate (as shown in Figure 1), and the number of residues a with a diameter greater than 0.12 μm exceeds 10,000 , so that the residue a requires special process steps to remove, increasing the cost of production

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