Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Novel etching alkali tank

An alkali tank and a new type of technology, applied in the field of photovoltaic crystal silicon wafer processing equipment, can solve the problems of poor quality and low processing efficiency of photovoltaic crystal silicon cells, and achieve the effects of easy operation, good market application prospects, and improved quality of silicon wafers

Inactive Publication Date: 2020-04-28
晋能光伏技术有限责任公司
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of this, in order to solve the technical defects of low processing efficiency and poor quality of photovoltaic silicon cells caused by the separate use of the spray type alkali tank and the submerged alkali tank in the prior art, the present invention provides a spray type Alkali tank and submerged alkali tank are combined into one new etching alkali tank to improve the quality of photovoltaic crystalline silicon cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Novel etching alkali tank
  • Novel etching alkali tank
  • Novel etching alkali tank

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0041] In describing the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", The orientation or positional relationship indicated by "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying the referred device or positional relationship. Elements must hav...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a novel etching alkali tank. The novel etching alkali tank comprises: a tank body, wherein the tank body comprises a main tank, an auxiliary tank and a connecting pipe, and themain tank and the auxiliary tank are connected and communicated through the connecting pipe, the main tank comprises a first main tank body and a second main tank body which are oppositely arranged,and a filter screen is formed between the first main tank body and the second main tank body; multiple sets of water pressing rollers which are arranged in parallel, are arranged in the first main tank body and the second main tank body in the direction perpendicular to the moving direction of the silicon wafer, and are rotationally connected with the first main tank body and the second main tankbody; and a liquid spraying pipe which is fixed in the second main tank body, wherein the liquid spraying pipe and the water pressing rollers are arranged in parallel, and a nozzle is connected to theliquid spraying pipe. The novel etching alkali tank is reasonable in design, simple in structure, convenient to operate, space-saving and rich in function, integrates immersion and spraying functions, and can remarkably improve the processing efficiency of silicon wafers and reduce the reject ratio in the production process of the silicon wafers.

Description

technical field [0001] The invention relates to the technical field of photovoltaic crystal silicon wafer processing equipment, and more specifically relates to a novel etching alkali tank. Background technique [0002] With the rapid approach of photovoltaic grid parity, 2019 will become a milestone in the global solar industry. The cost of GF continues to decline, creating huge opportunities for us. At the same time, there is a strong demand for cells with high conversion efficiency. Continuously improving the conversion efficiency of cells is a must The direction and driving force for the continuous advancement of the photovoltaic industry. [0003] The mainstream PERC process in the industry mainly improves the passivation effect of the front and back of the battery while improving the efficiency of auxiliary materials in each process. The mainstream passivation processes include annealing, thermal oxygen, ALD, and back plating; Miscellaneous and positive contact have a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B33/10C30B29/06H01L21/67H01L31/18
CPCC30B29/06C30B33/10H01L21/6708H01L21/67086H01L31/1804Y02P70/50
Inventor 张冬冬王苗袁团李浩宋小刚韩勇王旭东贾慧君
Owner 晋能光伏技术有限责任公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products