Design method of heterogeneous film structure delay line type surface acoustic wave device

Abstract

The invention discloses a design method of a heterogeneous thin film structure delay line type surface acoustic wave device. The method comprises the following steps of 1, selecting a stacking mode ofa thin film material and a surface acoustic wave device model; 2, establishing surface acoustic wave device models with different thicknesses and acquiring dispersion characteristics of the surface acoustic wave device models; 3, according to the dispersion characteristic of the surface acoustic wave device model, selecting the film thickness which most meets the design requirement; 4, presettinga performance index of the surface acoustic wave device under the condition that the thickness of each film of the surface acoustic wave device model is determined; 5, designing a transducer structure according to the design indexes of the surface acoustic wave device, and calculating parameter values of the device; and 6, performing parameter judgment and feedback adjustment on the surface acoustic wave device. The method is simple in step, sapphire is selected as a substrate layer, an aluminum nitride and gallium nitride double-layer piezoelectric film is selected, and design of the delay line type surface acoustic wave device of the heterogeneous film structure is achieved.

Description

technical field [0001] The invention belongs to the technical field of surface acoustic wave device design, and in particular relates to a design method of a delay line type surface acoustic wave device with a heterogeneous film structure. Background technique [0002] With the rapid development of electronic information technology, electronic communication equipment continues to develop in the direction of high frequency and miniaturization, which makes discrete components such as internal surface acoustic wave devices continue to develop in the direction of high frequency and integration. Most of the current surface acoustic wave devices are based on piezoelectric single crystal material substrates. Since the center frequency of surface acoustic wave devices is proportional to the surface acoustic wave velocity of the material, it is inversely proportional to the finger width of the interdigital transducer, and piezoelectric single crystal The surface acoustic wave velocit...

AI Technical Summary

Problems solved by technology

Most of the current surface acoustic wave devices are based on piezoelectric single crystal material substrates. Since the center frequency of surface acoustic wave devices is proportional to the surface acoustic wave velocity of the material, it is inversely proportional to the finger width of the interdigital transducer, and piezoelectric single crystal The surface acoustic wave velocity of the material is determined by the piezoelectric single crystal material, and the wave velocity is determined after the material is selected. Usually, the surface acoustic wave velocity of the piezoelectric single crystal substrate is relatively low, and the width of the fingers is limited by the photolithography process. infinite refinement

Therefore, the piezoelectric single crystal surface acoustic wave device is greatly limited in the high-frequency field, and the piezoelectric single crystal substrate is difficult to be compatible with semiconductor technology, and it is difficult to realize device integration

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