A kind of preparation method of metal substrate

A metal substrate and metal layer technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as surface roughness of metal substrates and achieve cost-saving effects

Active Publication Date: 2022-08-02
XIAMEN QIANZHAO SEMICON TECH CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of this, the object of the present invention is to provide a method for preparing a metal substrate, which can effectively solve the problem of the surface roughness of the metal substrate in the existing hot rolling process, and can flexibly adjust the stress and thermal expansion coefficient

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of preparation method of metal substrate
  • A kind of preparation method of metal substrate
  • A kind of preparation method of metal substrate

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0028] Please refer to Figure 1-Figure 4 , an embodiment of the present invention provides a method for preparing a metal substrate, including:

[0029] Disposing a sacrificial layer 2 on the mother board 1 with an atomically smooth surface;

[0030] A metal layer 3 is provided on the side of the sacrificial layer 2 away from the motherboard 1;

[0031] The metal layer 3 is separated from the sacrificial layer 2, and the separated metal layer 3 is the obtained metal substrate.

[0032] The motherboard can be an existing conventional substrate, such as a sapphire substrate, a Si substrate, a GaAs substrate, an InP substrate, a GaP substrate or a quartz substrate. It should be understood that the motherboard is not limited to those listed above. substrate.

[0033] The above-mentioned way of setting the sacrificial layer can use PECVD to grow a layer of SiO2 or SiNx layer, or use evaporation or sputtering equipment to deposit a layer of Ti layer, Al layer, Ni layer, etc., or ...

Embodiment 1

[0049] A preparation method of a metal substrate, comprising the following steps:

[0050] S11. Provide a motherboard 1 with an atomically smooth upper surface, such as figure 1 shown;

[0051] S12, disposing a sacrificial layer 2 on the upper surface of the motherboard 1, such as figure 2 shown;

[0052] S13, disposing the metal layer 3 of the multi-layer stack structure on the upper surface of the sacrificial layer 2, such as image 3 shown;

[0053] S14, peeling off the metal layer 3 from the sacrificial layer 1 to obtain a metal layer 3 with a smooth surface, and the metal layer 3 obtained by peeling off is the prepared metal substrate, such as Figure 4 shown.

Embodiment 2

[0055] A preparation method of a metal substrate, comprising the following steps:

[0056] S21. Provide a mother board 1 with an atomically smooth surface, adjust the mother board 1 to a target shape and target size, and then make a graphic structure 11 on the upper surface of the mother board 1, such as Figure 5 shown;

[0057] S22, disposing a sacrificial layer 2 on the upper surface of the motherboard 1, such as Image 6 shown;

[0058] S23, disposing a metal layer 3 on the upper surface of the sacrificial layer 2, such as Figure 7 shown;

[0059] S24, peeling off the metal layer 3 from the sacrificial layer 2 to obtain a metal substrate with a smooth surface, the metal substrate having a pattern structure complementary to the pattern structure on the motherboard 1, such as Figure 8 shown.

[0060] In the above embodiments 1 and 2, the selection and setting of the motherboard, the setting of the sacrificial layer, the setting of the metal layer, and the method of se...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention provides a method for preparing a metal substrate, comprising: disposing a sacrificial layer on a motherboard with an atomically smooth surface; disposing a metal layer on the side of the sacrificial layer away from the motherboard; separating from the sacrificial layer The metal layer is removed to form a metal substrate. A metal substrate is formed by disposing a sacrificial layer on a mother board with an atomically smooth surface, disposing a metal layer on the sacrificial layer, and then reversely separating a metal layer with an atomically smooth surface. The problem of large surface roughness of the metal substrate existing in the hot rolling process is effectively solved, and the subsequent growth process on the metal substrate is facilitated. And can flexibly and accurately adjust the number of layers, thickness, material, shape, size and surface morphology of the metal substrate, and then control its stress, thermal expansion coefficient, thermal conductivity and other parameters.

Description

technical field [0001] The invention relates to the field of semiconductor chip manufacturing, in particular to a method for preparing a metal substrate. Background technique [0002] Due to the good mechanical properties, electrical conductivity, thermal conductivity, thermal shock resistance and other characteristics of metal substrates, it is widely used in the preparation of high-performance, high-power, high-reliability microelectronic chips (such as high electron mobility transistors, thin film transistors, etc.) or optoelectronics. When making chips (such as light-emitting diodes, laser diode arrays, solar cells, etc.), it is often necessary to prepare a chip functional layer on a metal substrate or transfer it to a metal substrate to form a chip structure with a metal substrate. [0003] At present, the preparation of metal substrates mainly adopts the method of hot rolling forming. Hot rolling forming mainly uses the good rolling properties of metals and their alloy...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/683
CPCH01L21/6835H01L2221/68386H01L2221/68345H01L2221/68318
Inventor 赵斌曲晓东杨克伟陈凯轩
Owner XIAMEN QIANZHAO SEMICON TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap