High-thermal-conductivity and high-wear-resistance silicon nitride ceramic as well as preparation method and application thereof

A technology of silicon nitride ceramics with high thermal conductivity, applied in the field of ceramics, can solve the problems of difficult tool processing, prolong tool life, and low diamond toughness, and achieve the effects of enhancing bonding strength, inhibiting graphitization, and good cutting performance

Inactive Publication Date: 2020-04-10
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is easy to graphitize at high temperature, which is not conducive to prolonging the life of the tool. At the same time, the diamond has low toughness, difficult to process and prepare the tool, and the cost is high.

Method used

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  • High-thermal-conductivity and high-wear-resistance silicon nitride ceramic as well as preparation method and application thereof
  • High-thermal-conductivity and high-wear-resistance silicon nitride ceramic as well as preparation method and application thereof
  • High-thermal-conductivity and high-wear-resistance silicon nitride ceramic as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] 1. Ti-coated diamond (10% mass fraction), particle size 64μm, Ti film thickness 150nm; Si 3 N 4 (80% mass fraction), particle size 0.5 μm, purity 99.99wt.%; MgO (5% mass fraction), particle size 100nm, purity 99.99wt.%; Yb 2 o 3 (5% mass fraction), particle size 3 μm, purity 99.99%. Put the powder into a nylon ball mill jar, add ethanol and Si with a diameter of 5-10mm 3 N 4 The ball is used as the ball milling medium, the ball milling time is 24 hours, the rotation speed is 120r / min, and the mixed powder is obtained after ball milling and drying.

[0029] 2. Put the mixed powder in N 2 Under the atmosphere, add 35MPa axial pressure, heat up to 1600°C at a rate of 100°C / min, hold for 10min, and go through discharge plasma sintering. The discharge plasma current is DC pulse current. 5ms, the density of Si containing Ti-coated diamond particles is 97%. 3 N 4 base ceramics.

[0030] figure 1 Be the Si of the diamond that contains 10wt.% Ti plating in embodiment 1...

Embodiment 2

[0032] 1. Ti-coated diamond (20% mass fraction), particle size 64μm, Ti film thickness 150nm; Si 3 N 4 (70% mass fraction), particle size 0.5 μm, purity 99.99wt.%; MgO (5% mass fraction), particle size 100nm, purity 99.99wt.%; Yb 2 o 3 (5% mass fraction), particle size 3 μm, purity 99.99%. Put the powder into a nylon ball mill jar, add ethanol and Si with a diameter of 5-10mm 3 N 4 The ball is used as the ball milling medium, the ball milling time is 24 hours, the rotation speed is 120r / min, and the mixed powder is obtained after ball milling and drying.

[0033] 2. Put the mixed powder in N 2Under the atmosphere, apply an axial pressure of 35MPa, heat to 1600°C at a rate of 100°C / min, and hold for 10 minutes. After discharge plasma sintering, the discharge plasma current is a DC pulse current. 5ms, the Si containing Ti-coated diamond particles with a density of 96% was produced 3 N 4 base ceramics.

[0034] figure 2 Be the Si of the diamond that contains 20wt.% Ti ...

Embodiment 3

[0036] 1. Ti-coated diamond (30% mass fraction), particle size 64μm, Ti film thickness 150nm; Si 3 N 4 (60% mass fraction), particle size 0.5 μm, purity 99.99wt.%; MgO (5% mass fraction), particle size 100nm, purity 99.99wt.%; Yb 2 o 3 (5% mass fraction), particle size 3 μm, purity 99.99%. Put the powder into a nylon ball mill jar, add ethanol and Si with a diameter of 5-10mm 3 N 4 The ball is used as the ball milling medium, the ball milling time is 24 hours, the rotation speed is 120r / min, and the mixed powder is obtained after ball milling and drying.

[0037] 2. Put the mixed powder in N 2 Under the atmosphere, apply an axial pressure of 35MPa, heat to 1600°C at a rate of 100°C / min, hold for 10min, and undergo discharge plasma sintering. 5ms, the Si containing Ti-coated diamond particles with a density of 96% was produced 3 N 4 base ceramics.

[0038] image 3 Be the Si of the diamond that contains 30wt.% Ti plating in embodiment 3 3 N 4 SEM micrographs of the ...

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Abstract

The invention belongs to the technical field of ceramics, and discloses high-thermal-conductivity and high-wear-resistance silicon nitride ceramic as well as a preparation method and application thereof. The preparation method of the silicon nitride ceramic comprises the following steps: adding diamond with a metal coating, Si3N4, a sintering aid MgO and Yb2O3 powder into ethanol and a Si3N4 ball-milling medium, carrying out ball-milling and mixing, and carrying out ball-milling and drying to obtain mixed powder; and heating the mixed powder to 1600-1700 DEG C under the axial pressure of 30-100 Mpa and under a protective atmosphere, conducting heat preservation, and carrying out spark plasma sintering. The silicon nitride ceramic provided by the invention has high thermal conductivity andwear resistance, good cutting performance and long cutting life, and can be applied to the field of ceramic cutters.

Description

technical field [0001] The invention belongs to the technical field of ceramics, and in particular relates to a silicon nitride ceramic with high thermal conductivity and high wear resistance, a preparation method and application thereof. Background technique [0002] Si 3 N 4 Ceramic is a kind of non-oxide engineering ceramics, which has excellent characteristics such as high hardness and good thermal shock resistance, and has excellent high temperature performance. It can still maintain high hardness at 1300°C and has high chemical stability. Si 3 N 4 Ceramics are widely used in the field of cutting tools. However, when cutting difficult-to-machine materials such as superalloys and nickel-based alloys, the high cutting temperature leads to short tool life, and it is necessary to further improve the thermal conductivity and wear resistance of the tool material. Diamond is the hardest material in nature, and polycrystalline diamond is widely used in the field of cutting ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/584C04B35/628
CPCC04B35/584C04B35/62839C04B2235/3206C04B2235/3224C04B2235/427C04B2235/666
Inventor 郭伟明罗嗣春林士楠吴利翔林华泰
Owner GUANGDONG UNIV OF TECH
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