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Quantum dots and preparation method thereof

A technology of quantum dots and ions, applied in the field of quantum dots and their preparation, can solve the problems of long preparation time, low luminous efficiency, poor stability of quantum dots, etc.

Inactive Publication Date: 2020-04-07
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The purpose of the present invention is to overcome the above-mentioned shortcomings of the prior art, provide a quantum dot and its preparation method, aiming at solving the technical problems of poor stability and low luminous efficiency of the existing quantum dot, long preparation time, high cost and low efficiency of the preparation method

Method used

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preparation example Construction

[0021] On the one hand, an embodiment of the present invention provides a method for preparing quantum dots, which includes the following steps:

[0022] S001: Provide a group III cation precursor and a ligand, dissolve the group III cation precursor and ligand in a solvent, and perform heat treatment under a first temperature condition to obtain a mixed solution;

[0023] S002: Continue to heat the mixed solution to a second temperature, and then add a group V anion precursor to the mixed solution to perform a nucleation reaction to obtain a group III-V quantum dot nucleus solution.

[0024] In the method for preparing quantum dots provided by the embodiments of the present invention, before the nucleation reaction, the group III cationic precursor and ligand are dissolved in a solvent and heated under the first temperature condition, which not only makes the ligand and group III The cations are fully coordinated to help the full reaction of the anions and cations, and can effective...

Embodiment 1-1

[0181] (1) Preparation of quantum dot core InP:Zn solution

[0182] At room temperature, add 0.2mmol indium chloride and 1mmol zinc acetate into a 50ml three-necked flask, then add 1ml oleic acid and 10ml octadecene. Evacuate at 80°C for 60mins under vacuum protection, and then discharge nitrogen at 140°C for 60mins under nitrogen atmosphere protection. The temperature was raised to 280° C., 0.15 mmol of tris(trimethylsilyl) phosphine was added, and the reaction was carried out for 2 minutes to obtain an InP:Zn quantum dot core solution.

[0183] (2) Synthesis of quantum dot shell ZnS coating the quantum dot core InP:Zn

[0184] At 300° C., 0.3 ml of octanethiol and 2 mmol of zinc oleate were added to the InP:Zn quantum dot core solution. After 60 minutes of reaction, InP / ZnS core-shell quantum dots are obtained.

Embodiment 1-2

[0186] (1) Preparation of quantum dot core InP:Zn solution

[0187] At room temperature, add 0.2mmol indium chloride and 1mmol zinc acetate into a 50ml three-necked flask, then add 1ml oleic acid and 10ml octadecene. Evacuate at 80°C for 60mins under vacuum protection, and then discharge nitrogen at 140°C for 60mins under nitrogen atmosphere protection. The temperature was raised to 280° C., 0.15 mmol of tris(trimethylsilyl) phosphine was added, and the reaction was carried out for 2 minutes to obtain an InP:Zn quantum dot core solution.

[0188] (2) Synthesis of quantum dot shell ZnSe / ZnS coated with the quantum dot core InP:Zn

[0189] At 300° C., 0.2 mmol of tributyl phosphine selenide was added to the InP:Zn quantum dot core solution. After reacting for 20 minutes, 0.2 ml of octyl mercaptan and 2 mmol of zinc oleate were added. After 40 minutes of reaction, InP / ZnSe / ZnS core-shell quantum dots are obtained.

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Abstract

The invention belongs to the technical field of nano materials, and particularly relates to quantum dots and a preparation method thereof. The preparation method comprises the following steps: providing a group III cationic precursor and a ligand, wherein the group III cationic precursor comprises one or more metal halide precursors and one or more metal oxide precursors and / or one or more metal hydroxide precursors; dissolving the group III cationic precursor and the ligand in a solvent, and carrying out heating treatment under a first temperature condition to obtain a mixed solution; and continuously heating the mixed solution to a second temperature, then adding a group V anion precursor into the mixed solution, and carrying out a nucleation reaction to obtain a group III-V quantum dotnuclear solution. The preparation method is stable in technology, simple in process, low in cost and beneficial to later-period large-scale preparation, and the prepared quantum dots not only improvethe luminous efficiency, but also are more beneficial to growth of a thick shell layer.

Description

Technical field [0001] The invention belongs to the technical field of nano materials, and specifically relates to a quantum dot and a preparation method thereof. Background technique [0002] Quantum dots, also called semiconductor nanocrystals, have a particle radius close to or smaller than the exciton Bohr radius. Due to the existence of the "quantum size" effect, as the size of the quantum dots is further reduced, the continuous energy level structure will gradually change to a discrete and discontinuous energy level structure. After being excited by light of a certain wavelength of energy, the photons in the valence band that absorb a certain energy are excited to the conduction band, and the excited electrons will transition from the conduction band to the valence band, and release energy in the form of light, emitting a significant Fluorescence phenomenon. Therefore, by adjusting the size and chemical composition of quantum dots in a certain way, the emission spectrum c...

Claims

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Application Information

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IPC IPC(8): C09K11/02C09K11/70C09K11/88B82Y20/00B82Y30/00B82Y40/00
CPCB82Y20/00B82Y30/00B82Y40/00C09K11/02C09K11/703C09K11/883
Inventor 聂志文杨一行
Owner TCL CORPORATION
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