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Quantum dot and preparation method thereof

A technology of quantum dots and ions, applied in the field of quantum dots and their preparation, can solve the problems of poor stability of quantum dots, long preparation time, low luminous efficiency, etc., and achieve narrowing of peak width, suppression of non-radiative transition, and improvement of luminous efficiency. Effect

Inactive Publication Date: 2020-04-07
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The purpose of the present invention is to overcome the above-mentioned deficiencies of the prior art, to provide a quantum dot and its preparation method, aiming to solve the problem of poor stability, wide peak width and low luminous efficiency of the existing quantum dots, long preparation time, high cost and inefficient technical issues

Method used

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preparation example Construction

[0020] On the one hand, the embodiment of the present invention provides a method for preparing quantum dots, comprising the following steps:

[0021]S001: providing group III cation precursors and ligands, dissolving the group III cation precursors and ligands in a solvent, and performing heat treatment under a first temperature condition to obtain a mixed solution;

[0022] S002: continue to heat up the mixed solution to a second temperature, and then add a group V anion precursor to the mixed solution to perform a nucleation reaction to obtain a group III-V quantum dot nuclei solution.

[0023] In the preparation method of quantum dots provided by the embodiments of the present invention, before the nucleation reaction, the group III cation precursor and the ligand are dissolved in a solvent and heated under the first temperature condition, so that not only the ligand can be combined with the group III The full coordination of cations is conducive to the full reaction of an...

Embodiment 1-1

[0180] (1) Preparation of quantum dot core InP:Zn solution

[0181] At room temperature, add 0.2mmol indium chloride and 1mmol zinc acetate into a 50ml three-necked flask, then add 1ml oleic acid and 10ml octadecene. Vacuumize at 80°C for 60mins under vacuum protection, and then exhaust nitrogen at 140°C for 60mins under nitrogen atmosphere protection. Raise the temperature to 280°C, add 0.15mmol tris(trimethylsilyl)phosphine, and react for 2mins to obtain an InP:Zn quantum dot nucleus solution.

[0182] (2) Synthesis of the quantum dot shell ZnS covering the quantum dot core InP:Zn

[0183] At 300° C., 0.3 ml of octyl mercaptan and 2 mmol of zinc oleate were added to the InP:Zn quantum dot core solution. After 60mins of reaction, InP / ZnS core-shell quantum dots were obtained.

Embodiment 1-2

[0185] (1) Preparation of quantum dot core InP:Zn solution

[0186] At room temperature, add 0.2mmol indium chloride and 1mmol zinc acetate into a 50ml three-necked flask, then add 1ml oleic acid and 10ml octadecene. Vacuumize at 80°C for 60mins under vacuum protection, and then exhaust nitrogen at 140°C for 60mins under nitrogen atmosphere protection. Raise the temperature to 280°C, add 0.15mmol tris(trimethylsilyl)phosphine, and react for 2mins to obtain an InP:Zn quantum dot nucleus solution.

[0187] (2) Synthesis of quantum dot shell ZnSe / ZnS covering the quantum dot core InP:Zn

[0188] At 300° C., 0.2 mmol tributylphosphine selenide was added to the InP:Zn quantum dot core solution. After reacting for 20 mins, 0.2 ml of octyl mercaptan and 2 mmol of zinc oleate were added. After 40mins of reaction, InP / ZnSe / ZnS core-shell quantum dots were obtained.

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Abstract

The invention relates to a quantum dot and a preparation method thereof. The preparation method comprises the following steps: providing a group-III cationic precursor and a ligand, wherein the group-III cationic precursor comprises one or more metal halide precursors, one or more metal acetylacetonate precursors, one or more metal oxide precursors and / or one or more metal hydroxide precursors; dissolving the group-III cationic precursor and the ligand in a solvent, and carrying out heat treatment under a first temperature condition to obtain a mixed solution; and continuously heating the mixed solution to a second temperature, then adding a group-V anionic precursor into the mixed solution, and carrying out a nucleation reaction to obtain a group-III-V quantum dot core solution. The preparation method is stable in technology, simple in process, low in cost and beneficial for later large-scale preparation; and the prepared quantum dot is improved in luminous efficiency, remarkably narrowed in peak width, and more beneficial for the growth of a thick shell layer.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials, and in particular relates to a quantum dot and a preparation method thereof. Background technique [0002] Quantum dots, also known as semiconductor nanocrystals, have particle radii close to or smaller than the exciton Bohr radius. Due to the existence of the "quantum size" effect, as the size of quantum dots is further reduced, the continuous energy level structure will gradually transform into a discrete and discontinuous energy level structure. After being excited by light with a certain wavelength and energy, the photons that absorb a certain energy in the valence band are excited to the conduction band, and the electrons in the excited state will jump from the conduction band to the valence band, and release energy in the form of light, emitting a significant fluorescence phenomenon. Therefore, by adjusting the size and chemical composition of quantum dots in a certain way, th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/70C09K11/88B82Y20/00B82Y30/00
CPCB82Y20/00B82Y30/00C09K11/025C09K11/70C09K11/703C09K11/883
Inventor 聂志文杨一行
Owner TCL CORPORATION
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