Ga2O3-film-based solar-blind ultraviolet detector and preparation method and application thereof

An ultraviolet detector, ga2o3 technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problem of high cost, achieve the effect of low power consumption, high resolution and stable structure

Active Publication Date: 2020-02-28
金华紫芯科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The existing solar-blind ultraviolet imaging corona detection device uses a high-cut ultraviolet filter, which needs to be equipped with an expensive high-cut ultraviolet filter, and the cost is high

Method used

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  • Ga2O3-film-based solar-blind ultraviolet detector and preparation method and application thereof
  • Ga2O3-film-based solar-blind ultraviolet detector and preparation method and application thereof
  • Ga2O3-film-based solar-blind ultraviolet detector and preparation method and application thereof

Examples

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Effect test

example 1

[0030] a kind of Ga 2 o 3 Preparation method of film-based sun-blind ultraviolet detector:

[0031] First take a piece of (0001) surface α-Al 2 o 3 substrate, the α-Al 2 o 3 Soak the substrate in acetone, ethanol, and deionized water for 10 minutes, then rinse it with deionized water after taking it out, and finally wash it with dry N 2 air-dried and ready for use; put the above-mentioned cleaned and dried substrate in a ceramic boat, such as figure 1 As shown, and put the ceramic boat containing the substrate 2 into the quartz reaction tube 1, and put it into the heating zone of the tube furnace. Vacuumize the chamber and pass in argon gas. The direction of the arrow in the figure is the gas flow direction, adjust the pressure in the vacuum chamber, and then heat the (0001) surface Al 2 o 3 For the substrate, when the temperature rises to the set temperature, open the oxygen and trimethylgallium gas valves successively to adjust the gas flow; turn on the radio frequen...

example 2

[0038] a kind of Ga 2 o 3 Preparation method of film-based sun-blind ultraviolet detector:

[0039] First take a piece of (0001) surface α-Al 2 o 3 substrate, the α-Al 2 o 3 Soak the substrate in acetone, ethanol, and deionized water for 10 minutes, then rinse it with deionized water after taking it out, and finally wash it with dry N 2 Air-dried, ready to use; the above-mentioned cleaned and dried substrates were placed in a ceramic boat and placed in a quartz reaction tube. Vacuumize the cavity, pass in argon gas, adjust the pressure in the vacuum cavity, and then heat the (0001) surface Al 2 o 3 For the substrate, when the temperature rises to the set temperature, open the oxygen and trimethylgallium gas valves successively to adjust the gas flow; turn on the radio frequency power supply and set the radio frequency power; deposit gallium oxide thin film on the substrate. Among them, the cavity pressure is 1Pa after vacuuming; the cavity pressure is 3×10 1 Pa; the r...

example 3

[0043] a kind of Ga 2 o 3 Preparation method of film-based sun-blind ultraviolet detector:

[0044] First take a piece of (0001) surface α-Al 2 o 3 substrate, the α-Al 2 o 3 Soak the substrate in acetone, ethanol, and deionized water for 10 minutes, then rinse it with deionized water after taking it out, and finally wash it with dry N 2 Air-dried, ready to use; the above-mentioned cleaned and dried substrates were placed in a ceramic boat and placed in a quartz reaction tube. Vacuumize the cavity, pass in argon gas, adjust the pressure in the vacuum cavity, and then heat the (0001) surface Al 2 o 3 For the substrate, when the temperature rises to the set temperature, open the oxygen and trimethylgallium gas valves successively to adjust the gas flow; turn on the radio frequency power supply and set the radio frequency power; deposit gallium oxide thin film on the substrate. Among them, the cavity pressure is 1Pa after vacuuming; the cavity pressure is 3×10 1 Pa; the r...

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Abstract

The invention belongs to the field of safety detection of high-voltage power transmission and transformation equipment, and specifically relates to a Ga2O3-film-based solar-blind ultraviolet detectorand a preparation method and application thereof. The preparation method comprises the steps: taking (0001) surface Al2O3 as a substrate and trimethyl gallium as a gallium source, growing a beta-Ga2O3film layer on the (0001) surface Al2O3 substrate through a plasma enhanced chemical vapor deposition method, and forming an Au / Ti interdigital electrode on the beta-Ga2O3 film layer through magnetronsputtering. The Ga2O3-based corona detection device has the advantages of being high in response speed, high in resolution ratio, long in action distance, free of interference of sunlight, capable ofachieving accurate positioning and the like, and is particularly suitable for being applied to various severe environments such as a high-voltage power transformation system and a high-voltage powertransmission line. The device has a great commercial value for detecting the corona generated by overhead transmission lines and power transformation equipment.

Description

technical field [0001] The invention belongs to the field of safety detection of high-voltage power transmission and transformation equipment, and specifically relates to a Ga 2 o 3 Film-based solar-blind ultraviolet detector, preparation method and application. [0002] technical background [0003] Corona discharge refers to the phenomenon of self-sustained discharge that occurs when there are many local ionization and excitation processes on the surface of a charged body in a gas or liquid medium, but there is no breakdown or conduction between electrodes, and it often occurs in an uneven electric field. In very high areas, such as corona discharge in transmission lines, high-voltage electrical appliances, insulators, etc. in the power field. Corona consumes electric energy, and the pulsed electromagnetic waves generated during corona discharge will interfere with radio and high-frequency communications; corona will also cause corrosion on the surface of the wire, thereb...

Claims

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Application Information

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IPC IPC(8): H01L31/101H01L31/0216H01L31/0224H01L31/18
CPCH01L31/02161H01L31/022408H01L31/101H01L31/18Y02P70/50
Inventor 郭道友王顺利
Owner 金华紫芯科技有限公司
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