Stress regulation gallium nitride-based infrared-ultraviolet double-color light detector and preparation method thereof

A gallium nitride-based, stress-controlled technology, used in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the difficulty of integrating infrared-ultraviolet photosensitive materials or detection systems, weak detection performance of infrared detection systems, and dual-color Due to the complex structure of the integrated detector, it can achieve broad development and application prospects, reduce reflection, and enhance the absorption of light.

Active Publication Date: 2020-02-14
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

[0005] In order to solve the problems of infrared-ultraviolet photosensitive materials or detection system integration difficulties caused by lattice mismatch, weak detection performance of infrared detection systems after integrated devices, and complex structure of two-color integrated detectors, the present invention provides a stress-regulated nitriding Gallium-based infrared-ultraviolet dual-color photodetector and preparation method

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  • Stress regulation gallium nitride-based infrared-ultraviolet double-color light detector and preparation method thereof
  • Stress regulation gallium nitride-based infrared-ultraviolet double-color light detector and preparation method thereof

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preparation example Construction

[0047] Such as figure 2 As shown, the preparation method of the stress-regulated gallium nitride-based infrared-ultraviolet dual-color photodetector of the present invention mainly includes the following steps:

[0048] Step 1, using hydride vapor phase epitaxy (HVPE), NH 3 Growth of self-supporting GaN single crystal material with molten Ga gas phase transport method or pulling method 1;

[0049] Step 2, growing a buffer layer 2 on the GaN single crystal material 1 by metal organic chemical vapor deposition (MOCVD);

[0050] Step 3, growing a two-dimensional nitride film layer 3 on the buffer layer 2 by chemical vapor deposition or metalorganic chemical vapor deposition (MOCVD);

[0051] Step 4: Prepare the first ultraviolet light detector electrode 4 and the second ultraviolet light detector electrode 7 on the two-dimensional nitride thin film layer 3 using the prior art;

[0052] Step 5, preparing infrared photodetector electrodes 5 on the two-dimensional nitride thin f...

Embodiment 1

[0057] The stress-regulated gallium nitride-based infrared-ultraviolet dual-color photodetector of this embodiment specifically includes: a GaN single crystal material 1, a buffer layer 2, a two-dimensional nitride thin film layer 3, a first ultraviolet photodetector electrode 4, an infrared photodetector An electrode 5 , a first stress layer 6 , a second ultraviolet light detector electrode 7 , and a second stress layer 8 .

[0058] Among them, the GaN single crystal material 1 adopts GaN, the buffer layer 2 specifically adopts AlN, the two-dimensional nitride thin film layer 3 specifically adopts two-dimensional GaN, the first ultraviolet light detector electrode 4, the infrared light detector electrode 5, the second ultraviolet light detector electrode The device electrode 7, the first stress layer 6 and the second stress layer 8 are all made of diamond-like carbon (DLC).

[0059] The preparation method of the stress-regulated gallium nitride-based infrared-ultraviolet dual...

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Abstract

The invention discloses a stress regulation gallium nitride-based infrared-ultraviolet double-color light detector and a preparation method thereof, and belongs to the field of semiconductors. The light detector comprises a GaN single crystal material, and a first ultraviolet light detector electrode, a buffer layer, a second stress layer and a second ultraviolet light detector electrode which aresequentially arranged on the GaN single crystal material from left to right, wherein the two ends of the second stress layer are respectively in contact with the buffer layer and the side face of thesecond ultraviolet detector electrode. The light detector further comprises a two-dimensional nitride film layer arranged on the buffer layer, and a first stress layer and an infrared light detectorelectrode sequentially arranged on the two-dimensional nitride film layer from left to right, wherein the two ends of the first stress layer are respectively in contact with the side faces of the first ultraviolet light detector electrode and the infrared light detector electrode. The problems that an infrared-ultraviolet photosensitive material or a detection system is difficult to integrate dueto lattice mismatching, the detection performance of an infrared detection system is weak after a device is integrated, and a double-color integrated detector is complex in structure are solved. The technological process is simple, the operability is high, and the effect is obvious.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a stress-regulated gallium nitride-based infrared-ultraviolet dual-color photodetector and a preparation method thereof. Background technique [0002] As the core device of ultraviolet detection technology, ultraviolet detector has received great attention and in-depth research at home and abroad in recent years. In the early days, ultraviolet detectors were mainly used in military fields such as ultraviolet alarms, ultraviolet communications, and ultraviolet guidance. Later, ultraviolet detectors gradually matured and were used in civilian applications. Other fields such as medicine, spectroscopic analysis and particle detection. The first and second-generation semiconductors such as Si and GaAs can be used to make ultraviolet detectors, but due to the characteristics of small forbidden band width, large long-wave cut-off wavelength of the device, and low max...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/101H01L31/18
CPCH01L31/1013H01L31/1856Y02P70/50
Inventor 黎大兵刘新科孙晓娟贾玉萍石芝铭蒋科陈洋
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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